Misfit dislocations < Mismatch lattice < Mismatching

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 36.
[0-20] [0 - 20][0 - 36][20-35][20-40]

Ident.	Authors (with country if any)	Title
000020 (2014)		Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000217 (2013)		InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
000379 (2012)		Temperature dependent empirical pseudopotential theory for self-assembled quantum dots
000528 (2012)		First-principle study of the electronic and optical properties of BInGaAs quaternary alloy lattice-matched to GaAs
000623 (2012)		Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors
000808 (2011)		Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000824 (2011)		Improvement of structural and electrical properties of Cu2O films with InN epilayers
000843 (2011)		Growth mechanism of vertical compositional inhomogeneities in AlInN films
000B02 (2010)		Light-splitting photovoltaic system utilizing two dual-junction solar cells
000D34 (2009)		Strain effect in determining the geometric shape of self-assembled quantum dot
001186 (2008)		Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001258 (2007)		The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure
001266 (2007)		The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE
001520 (2006)		The effects of a stress field and chemical diffusion on electronic behaviour in InAs/GaAs quantum dots
001609 (2006)		InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001850 (2005)		Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
001B47 (2003)		Strain relaxation of InAs epilayer on GaAs under In-rich conditions
001B95 (2003)		High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001C33 (2003)		Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
001D36 (2002)		Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
001D42 (2002)		Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

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