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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Misfit dislocations »
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Misfit dislocation < Misfit dislocations < Mismatch lattice  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000360 (2012) Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
000B11 (2010) Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000F34 (2009) Critical lateral dimension for a nanoscale-patterned heterostructure using the finite element method
000F44 (2009) Calculation of phase diagrams in AlxIn1-xAs/InP, AsxSb1-xAl/InP and AIxIn1-xSb/InSb nano-film systems
001186 (2008) Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001258 (2007) The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure
001594 (2006) MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
001603 (2006) Influence of dislocation stress field on distribution of quantum dots
001992 (2004) Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
002072 (2000) Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure
002346 (1998) Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction
002526 (1997) Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE
002646 (1995-08-07) Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure
002752 (1994-07-18) Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells
002753 (1994-07-15) X-ray analysis of strain relaxation in strained-layer superlattices
002761 (1994-06-01) The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures
002808 (1993) X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices

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