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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Carrier lifetime »
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Carrier density < Carrier lifetime < Carrier mobility  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000543 (2012) Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000B61 (2010) Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model
000C79 (2009) Theoretical study of InGaAsP-InP active microring
001514 (2006) The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement
001557 (2006) Role of deep traps in carrier generation and transport in differently doped InP wafers
001B06 (2003-03-24) In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
002450 (1997-07-28) Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature
002457 (1997-05-15) Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells
002683 (1995-02-13) Deep levels in undoped In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 grown on GaAs (100) substrates
002720 (1995) Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate

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