Keywords
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Carrier density »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Carrier concentration < Carrier density < Carrier lifetime  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 109.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000041 (2014) Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature
000070 (2013) Thermoelectric properties of In1.3-xSnxSe prepared by spark plasma sintering method
000074 (2013) The structural, elastic and thermoelectric properties of Fe2VAl at pressures
000160 (2013) Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
000237 (2013) High temperature thermoelectric and magnetic properties of InxNdyCo4Sb12 skutterudites
000240 (2013) H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors
000269 (2013) Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
000277 (2013) Effects of Ge Dopant on Thermoelectric Properties of Barium and Indium Double-Filled p-Type Skutterudites
000286 (2013) Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films
000292 (2013) Dopant-induced band filling and bandgap renormalization in CdO: In films
000296 (2013) Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
000310 (2013) Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films
000317 (2013) Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
000324 (2013) Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
000419 (2012) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
000572 (2012) Effects of Excess Sb on Thermoelectric Properties of Barium and Indium Double-Filled Iron-Based p-Type Skutterudite Materials
000656 (2011) Ultrafast hot carrier dynamics in InN epitaxial films
000729 (2011) Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy
000733 (2011) Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector
000770 (2011) Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures
000824 (2011) Improvement of structural and electrical properties of Cu2O films with InN epilayers

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Carrier density" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Carrier density" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Carrier density
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024