Serveur d'exploration sur l'Indium - Analysis (Chine)

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Barrier height < Barrier layer < Base collector junction  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000038 (2014) Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper-indium-gallium-selenide solar cell efficiency
000573 (2012) Effects of AlN interlayer on the transport properties of nearly lattice-matched InAIN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000623 (2012) Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors
000718 (2011) Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000763 (2011) Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
000809 (2011) Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors
000837 (2011) High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000C06 (2010) Donor impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Hydrostatic pressure effect
000C13 (2010) Deposition behavior on the barrier layer of porous anodic alumina
001501 (2006) Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001547 (2006) Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001865 (2005) A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
001974 (2004) Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001B97 (2003) High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers

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