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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Barrier height »
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Barium titanates < Barrier height < Barrier layer  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000158 (2013) Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier
000273 (2013) Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region
000530 (2012) Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well
000549 (2012) Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer
000B70 (2010) Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection
001007 (2008) Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe
001062 (2008) Piezoresistivity in GaAs/InxGa1-xAs/AlAs superlattice structures
001119 (2008) Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices
001355 (2007) Modification of the organic/La0.7Sr0.3MnO3 interface by in situ gas treatment
001974 (2004) Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
002369 (1998) Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells
002412 (1998) Electrochemical fabrication of all organic heterojunction for polythiophene and its derivatives
002655 (1995-07-01) A double metal structure Pt/Al/n-InP diode
002682 (1995-02-15) Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs
002715 (1995) High-barrier Pt/Al/n-InP diode
002746 (1994-09-01) Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures
002840 (1993) A tristate switching device with double delta-doped quantum well structure
002859 (1992) Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure

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