Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. F. Li »
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Y. F. Lao < Y. F. Li < Y. F. Liang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001005 (2008) The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx
001F21 (2001) Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
001F31 (2001) Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
002048 (2000) Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate
002058 (2000) Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
002059 (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
002063 (2000) Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
002070 (2000) Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
002274 (1999) Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Indium arsenides
8Experimental study
8Quantum dots
7Molecular beam epitaxy
7Photoluminescence
6Gallium arsenides
5Crystal growth from vapors
5Self assembly
5Semiconductor materials
4Aluminium arsenides
4Atomic force microscopy
3Buffer layer
3III-V semiconductors
2Characterization
2Epitaxial layers
2Heteroepitaxy
2Heterojunctions
2Island structure
2Morphology
2Nanostructures
2Temperature dependence
2Thin films
1Absorption spectroscopy
1Alignment
1Amorphous hydrogenated material
1Annealing
1Binary compounds
1CV characteristic
1Chemical bonds
1Confinement
1Crystal orientation
1Defect density
1Defect states
1Dimension spectrum
1Dimensions
1Electronic density of states
1Electronic structure
1Fabrication property relation
1IV characteristic
1Interfaces
1Microstructure
1Mismatch lattice
1Modulated materials
1Multilayers
1Operating mode
1Ordering
1PECVD
1Passivation
1Quantum wells
1Quantum wires
1Self-assembled layers
1Silicon nitride
1Spatial distribution
1Substrates
1Sulfidation
1Surface structure
1TEM
1Ternary compounds
1X-ray photoelectron spectra

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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