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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « X. H. Xu »
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X. H. Xiao < X. H. Xu < X. H. Yan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000456 (2012) One-step synthesis of Cu(In,Ga)Se2 absorber layers by magnetron sputtering from a single quaternary target
000962 (2011) A novel one-step electrodeposition to prepare single-phase CuInS2 thin films for solar cells
001747 (2005) Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
001776 (2005) Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001930 (2004) The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
001977 (2004) Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers
001A27 (2004) Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots
001A55 (2003-12-15) Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001B51 (2003) Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
001F19 (2001) Organic negative-resistance devices using PPV containing electron-transporting groups on the main chain

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Gallium arsenides
6Indium arsenides
5Experimental study
5Molecular beam epitaxy
5Photoluminescence
4Semiconductor materials
3Atomic force microscopy
3Binary compounds
3Ternary compounds
3Thin films
2Aluminium arsenides
2Band structure
2Crystal growth from vapors
2Excited states
2Inorganic compounds
2Microstructure
2Nanostructured materials
2Optical properties
2Quantum dots
2Self-assembled layers
2Thickness
1Alignment
1Anomaly
1Bilayers
1Buffer layer
1Cathode sputtering
1Charge transfer
1Coatings
1Complexation
1Computerized simulation
1Conduction bands
1Conjugated copolymer
1Copper
1Copper selenides
1Copper sulfide
1Coverage rate
1Crystallinity
1Dispersive spectrometry
1Effective mass
1Electrodeposition
1Energy-level transitions
1Evaporation
1Gallium
1Gallium antimonides
1Gallium compounds
1Gallium selenides
1Grain size
1Growth mechanism
1III-V semiconductors
1ITO layers
1Indium compounds
1Indium selenides
1Indium sulfide
1Interface states
1Island structure
1Localized states
1Monte Carlo methods
1Morphology
1Multiple quantum well
1Nanostructures
1Negative resistance device
1Optical constants
1Organic material
1Oxadiazole copolymer
1Phenylene derivative copolymer
1Phenylenevinylene copolymer
1Physical vapor deposition
1Precipitation
1Preparation
1Pseudopotential methods
1Quantum wells
1Quantum wires
1Radiative transition
1Raman spectroscopy
1Scanning electron microscopy
1Self alignment
1Semiconductor superlattices
1Size effect
1Solar cell
1Solar cells
1Solid source molecular beam epitaxy
1Solution polycondensation
1Spectral line shift
1Sputter deposition
1Sputtering
1Step
1Strained layer
1Strained quantum well
1Superlattices
1Surface morphology
1Surface structure
1Temperature dependence
1Ternary compound
1Terpolymer
1Theoretical study
1Thin film
1Thin film cell
1Tuning
1Use
1Voltage current curve

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