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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. Liu »
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W. Lin < W. Liu < W. Lu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000365 (2012) The suppression and recovery of martensitic transformation in a Ni-Co-Mn-In magnetic shape memory alloy
000763 (2011) Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
000B66 (2010) Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
000B97 (2010) Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
001372 (2007) Influence of different precursor surface layers on Cu(In1- xGax)Se2 thin film solar cells
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001B86 (2003) Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
002539 (1996-12-30) A multiple-negative-differential-resistance switch with double InGaP barriers
002567 (1996-05-15) X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well
002949 (1989) Effect of the electric field on the binding energy of excitons in InAs/GaSb superlattices

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
3III-V semiconductors
2Carrier density
2Gallium nitrides
2Illumination
2Indium nitrides
2Multiple quantum well
2Photoluminescence
2Quantum yield
2Scanning electron microscopy
2Ternary compounds
2Thin films
2XRD
1Aluminium Gallium Arsenides Mixed
1Aluminium oxide
1Annealing
1Application
1Band structure
1Barrier layer
1Binary compound
1Binding energy
1Bistability
1Blue light
1Buffer layer
1CVD
1Chemical composition
1Cobalt alloys
1Copper Gallium Indium Selenides Mixed
1Copper selenides
1Crystal growth from vapors
1Dendrites
1Differential scanning calorimetry
1Dislocation
1Doping
1Electric field
1Electrical conductivity
1Epitaxial layers
1Excitation spectrum
1Exciton
1Field effect transistor
1Fluctuations
1Free carrier
1Gallium Antimonides
1Gallium arsenides
1Gallium nitride
1Gallium selenides
1Gates
1Grain boundaries
1Grain size
1Hall effect
1III-V compound
1Indium Arsenides
1Indium alloys
1Indium arsenides
1Indium nitride
1Indium oxide
1Indium selenides
1Inorganic compound
1Internal field
1Light emitting diode
1Logic circuit
1Longitudinal field
1Low pressure
1Luminescence quenching
1MOCVD
1Magnetic alloy
1Manganese alloys
1Martensitic transformations
1Microstructure
1Nanostructured materials
1Near infrared radiation
1Nickel alloys
1Patterned substrate
1Performance evaluation
1Phase separation
1Precipitation
1Pressure effects
1Quantum dot
1Quantum well
1Quaternary alloys
1Radiative recombination
1Raman spectrum
1Screening
1Secondary ion mass spectra
1Semiconductor materials
1Shape memory alloy
1Solar cell
1Solar cells
1Styrenesulfonate polymer
1Supercooling
1Superlattice
1Surface layer
1Temperature dependence
1Ternary compound
1Theoretical study
1Thin film
1Tin addition
1Transition element alloys
1Two-dimensional electron gas
1Vapor deposition

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