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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. Lin »
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W. Liang < W. Lin < W. Liu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
002169 (1999-09-13) High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor
002187 (1999-06-07) High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
002200 (1999-02-01) Determination of the valence-band offset for GaInAsSb/InP heterostructure
002323 (1998-05) Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
002452 (1997-07-07) Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region
002539 (1996-12-30) A multiple-negative-differential-resistance switch with double InGaP barriers
002688 (1995-01-16) A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
5Gallium arsenides
5Indium compounds
4III-V semiconductors
4Semiconductor growth
2Aluminium compounds
2CVD
2Design
2Gallium compounds
2MOCVD
2Photoluminescence
2Semiconductor quantum wells
2VPE
1Aluminium arsenides
1Bipolar transistors
1Conduction bands
1Electron mobility
1Fabrication
1Gain
1Heterojunction bipolar transistors
1Heterojunctions
1High electron mobility transistors
1Indium phosphides
1Interface states
1Laser cavities
1Laser mirrors
1Performance
1Quantum well lasers
1Semiconductor lasers
1Surface emitting lasers
1Surface recombination
1TEM
1Threshold current
1Valence bands
1semiconductor device breakdown

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