Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. L. Gu »
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S. L. Feng < S. L. Gu < S. L. Guo  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001370 (2007) Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001501 (2006) Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001703 (2005) Thermal annealing of InN films grown by metal-organic chemical vapor deposition
001865 (2005) A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
001C26 (2003) Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Indium nitrides
4Gallium nitrides
4Heterostructures
4Inorganic compounds
4Poisson equation
3Aluminium nitrides
3III-V semiconductors
3Schroedinger equation
3Self consistency
3Two-dimensional electron gas
2Atomic force microscopy
2Band structure
2Barrier layer
2Buffer layer
2Carrier density
2MOCVD
2Scanning electron microscopy
2Semiconductor materials
2Strained layer
2XRD
1Absorption spectra
1Ambient temperature
1Ammonia
1Annealing
1Binary compounds
1CVD
1Comparative study
1Compressive stress
1Computing method
1Conduction band
1Conduction bands
1Confinement
1Critical phenomena
1Crystal growth from vapors
1Crystal nucleation
1Crystal structure
1Cubic lattices
1Distribution functions
1Doping profile
1Electrical characteristic
1Electrical properties
1Electron distribution
1Electron gas model
1Electronic properties
1Electronic structure
1Energy gap
1Experimental result
1Experimental study
1Field effect transistor
1Field effect transistors
1Films
1Gallium compound
1Hall mobility
1III-V compound
1Indium compound
1Indium compounds
1Infrared spectra
1Integrated intensity
1Interfacial layer
1Low pressure
1Metallic thin films
1Metals
1Mirrors
1Nitrides
1Nitrogen compounds
1Operating conditions
1Optical absorption
1Photoluminescence
1Polarization
1Polarization mode
1Quantum wells
1Sapphire
1Scanning electron microscopes
1Schrödinger equation
1Temperature
1Ternary compounds
1Theoretical study
1Thermal annealing
1Thickness
1Thin films
1Two dimensional model
1VPE
1Wafers
1Waveform
1X-ray microscopy
1X-ray spectra

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