IndiumV3, Chine, Analysis, indexItem, Author.i, S. L. Feng

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.

Ident.	Authors (with country if any)	Title
000730 (2011)		Quantum dot lasers grown by gas source molecular-beam epitaxy
000B26 (2010)		InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy
001735 (2005)		Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm
001930 (2004)		The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
001977 (2004)		Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers
001B51 (2003)		Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
001F59 (2001)		Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands
001F97 (2000-10-02)		X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
002035 (2000-02-15)		Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
002057 (2000)		Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution
002081 (2000)		Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
002109 (2000)		Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
002146 (2000)		1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition
002410 (1998)		Evidence of multimodal patterns of self-organized quantum dots
002414 (1998)		Effects of growth interruption on self-assembled InAs/GaAs islands
002424 (1998)		Annealing behavior of InAs/GaAs quantum dot structures

List of associated KwdEn.i

Nombre de documents	Descripteur
14	Indium arsenides
13	Experimental study
13	Gallium arsenides
12	Photoluminescence
11	Quantum dots
10	Binary compounds
10	Semiconductor materials
8	Molecular beam epitaxy
7	III-V semiconductors
5	Atomic force microscopy
4	Crystal growth from vapors
3	DLTS
3	Epitaxial layers
3	Island structure
3	Self assembly
2	Continuous wave
2	Diffusion
2	Dislocations
2	GSMBE method
2	Growth mechanism
2	III-V compound
2	Indium compounds
2	Monolayers
2	Morphology
2	Nanostructures
2	Quantum dot lasers
2	Self organization
2	Semiconductor lasers
2	Semiconductor quantum dots
2	Surfaces
2	Temperature dependence
2	Ternary compounds
1	Activation energy
1	Aluminium arsenides
1	Annealing
1	Anomaly
1	Arsenides
1	Atomic layer method
1	Beryllium additions
1	Buffer layer
1	Calcium nitride
1	Charge carrier trapping
1	Charge transfer
1	Chemical interdiffusion
1	Coatings
1	Coverage rate
1	Deconvolution
1	Deformation
1	Dimension spectrum
1	Doped materials
1	Electron traps
1	Electronic structure
1	Energy-level transitions
1	Excited states
1	Heteroepitaxy
1	Heterojunctions
1	Hole traps
1	Indium phosphide
1	Inorganic compounds
1	Interface states
1	Laser diodes
1	Layer thickness
1	Microstructure
1	Nanostructured materials
1	Operating mode
1	Optical constants
1	Optical microscopy
1	Optical properties
1	Output power
1	Quantum wires
1	RHEED
1	Radiative transition
1	Ridge waveguides
1	STM
1	Self alignment
1	Self-assembled layers
1	Semiconductor superlattices
1	Silicon additions
1	Size effect
1	Spectral line shift
1	Step
1	Strains
1	Superlattices
1	Surface morphology
1	Surface structure
1	TEM
1	Thermal annealing
1	Thickness
1	Transients
1	Tuning
1	Waveguide lasers
1	XRD
1	self-assembly

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   |flux=    Chine
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   |type=    indexItem
   |index=    Author.i
   |clé=    S. L. Feng
}}

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « S. L. Feng »