Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « H. Q. Ni »
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H. Q. Jia < H. Q. Ni < H. Q. Xu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000991 (2010) The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
000A00 (2010) The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
000A08 (2010) Temperature dependence of hole spin relaxation in ultrathin InAs monolayers
001315 (2007) Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
001447 (2007) Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer
001747 (2005) Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
001776 (2005) Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001930 (2004) The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
001A27 (2004) Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots
001A55 (2003-12-15) Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Indium arsenides
6Gallium arsenides
5III-V semiconductors
5Molecular beam epitaxy
5Photoluminescence
3Binary compounds
3Experimental study
2Atomic force microscopy
2Band structure
2Crystal growth from vapors
2Gallium Arsenides
2Indium Arsenides
2Nanostructured materials
2Nonlinear refraction
2Optical properties
2Quantum dots
2Quantum wells
2Semiconductor materials
2Spin relaxation
2Temperature dependence
2Thickness
2Thin films
2Time resolved spectra
2Z scan
1Alignment
1Aluminium arsenides
1Bilayers
1Buffer layer
1Computerized simulation
1Conduction bands
1Coverage rate
1Effective mass
1Electric fields
1Electro-optical effects
1Electron hole pair
1Electron interaction
1Electron scattering
1Electron temperature
1Excited states
1Gallium antimonides
1Gallium compounds
1Gallium nitrides
1Growth mechanism
1III-V compound
1Indium compounds
1Indium nitrides
1Inorganic compounds
1Interface states
1Island structure
1Localized states
1Low temperature
1Luminescence decay
1Luminescence quenching
1Microstructure
1Monolayers
1Monte Carlo methods
1Multiple quantum well
1Nanostructures
1Nitrogen additions
1Non radiative recombination
1Nonlinear absorption
1Nonlinear optics
1Nonlinear refractive index
1Optical materials
1Phonon scattering
1Pseudopotential methods
1Quantum wires
1Rate equation
1Refractive index
1Relaxation time
1Sandwich structures
1Self alignment
1Self-assembled layers
1Semiconductor superlattices
1Solid source molecular beam epitaxy
1Spin dynamics
1Step
1Strained layer
1Strained quantum well
1Surface morphology
1Surface structure
1Temperature effects
1Ternary compounds
1Theoretical study
1X-ray absorption spectra

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