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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « H. Li »
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H. L. Zhu < H. Li < H. Liang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000490 (2012) Influence of structural relaxation on wetting behavior of molten In-Sn alloy on Cu40Zr44Al8Ag8 bulk metallic glass
000C75 (2009) Thermoelectric properties of indium-filled skutterudites prepared by combining solvothermal synthesis and melting
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000F81 (2008) Wetting behavior and interfacial characteristics of In-Sn alloy on CuZr-based bulk metallic glass
001368 (2007) Key issues associated with low threshold current density for InP-based quantum cascade lasers
001784 (2005) Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001842 (2005) Continuous-wave operation quantum cascade lasers at 7.95 μm
001961 (2004) Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers
002118 (2000) Effective method for evaluation of semiconductor laser quality
002132 (2000) Characteristics of semi-conductor laser diode with nonlinearly tapered waveguide
002391 (1998) InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy
002620 (1996) Electroluminescence from dysprosium- and neodymium-containing LB films

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Molecular beam epitaxy
5XRD
4Experimental study
4Semiconductor lasers
3Aluminium arsenides
3Crystal growth from vapors
3Doping
3GSMBE method
3Indium arsenides
3Quantum cascade laser
3Scanning electron microscopy
3Theory
2Contact angle
2Copper alloys
2Current density
2Epitaxial layers
2Experiments
2Gallium arsenides
2Growth mechanism
2III-V semiconductors
2Indium alloys
2Interface reaction
2Liquid alloys
2Metallic glasses
2Semiconducting indium phosphide
2Semiconductor materials
2Sessile drop method
2Ternary compounds
2Tin alloys
2Transition element alloys
2Wetting
2Zirconium alloys
1AES
1Annealing
1Antireflection coatings
1Arsenides
1Binary alloys
1Binary compounds
1Buffer layer
1Cobalt antimonides
1Contact stripe
1Continuous wave
1Crystal structure
1Crystallization
1Defect density
1Diffusion
1Diffusion coefficient
1Dysprosium Complexes
1Electric contacts
1Electric current distribution
1Electric fields
1Electrical conductivity
1Electroluminescence
1Electromagnetic wave propagation
1Emission spectra
1Far field
1Feedback
1Filled skutterudites
1Finite element beam propagation method
1Finite element method
1Hall effect
1High reflection coated devices
1High temperature
1Holography
1III-V compound
1Indium
1Indium compounds
1Indium gallium arsenide
1Indium phosphides
1Interfacial layer
1Ion beam sputtering
1Island structure
1Isothermal condition
1Lamellar structure
1Langmuir Blodgett layer
1Leakage currents
1Light emission
1Liquid solid interface
1Mathematical models
1Melting
1Microprocessor chips
1Microstructure
1Mode behavior
1Neodymium Complexes
1Nonlinearly tapered waveguide
1Optical properties
1Organic ligand
1Partial differential equations
1Phosphides
1Photoluminescence
1Planar buried crescent (PBC) structures
1Plasmons
1Pretreatment
1Quantum dots
1Quantum well lasers
1Refractive index
1Rhombus like stripe
1Seebeck effect
1Semiconducting gallium arsenide
1Semiconductor device structures

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