IndiumV3, Chine, Analysis, indexItem, Author.i, H. L. Zhu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.

Ident.	Authors (with country if any)	Title
000812 (2011)		InP-based deep-ridge NPN transistor laser
000F52 (2009)		Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
000F53 (2009)		Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
001043 (2008)		Self-pulsation in a two-section DFB laser with a varied ridge width
001400 (2007)		Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001495 (2007)		1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001588 (2006)		Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001589 (2006)		Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers
001615 (2006)		High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
001621 (2006)		Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001658 (2006)		Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
001845 (2005)		Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD

List of associated KwdEn.i

Nombre de documents	Descripteur
10	Indium arsenides
9	Gallium arsenides
7	III-V semiconductors
7	Photoluminescence
6	MOCVD
5	Binary compounds
5	Experimental study
5	Quantum dots
5	Semiconductor lasers
4	Aluminium arsenides
4	Quaternary compounds
3	Inorganic compounds
3	MOVPE method
3	Multiple quantum well
3	Nanostructured materials
3	Semiconductor materials
2	Distributed feedback lasers
2	Gallium phosphides
2	Growth mechanism
2	Indium Phosphides
2	Indium phosphides
2	Low pressure
2	Optical materials
2	Quantum well lasers
2	Quantum yield
2	Selective growth
2	Spectral line shift
2	Temperature dependence
2	Thickness
2	VPE
1	Annealing temperature
1	Atomic force microscopy
1	Blue shift
1	Buffer layer
1	Buried heterostructures
1	CVD
1	Comparative study
1	Critical value
1	Crystal growth from vapors
1	Density
1	Density distribution
1	Deposition rate
1	Distribution functions
1	Doping
1	Energy barrier
1	Energy gap
1	Fabrication
1	Far field
1	Feedback
1	Film growth
1	Finite size effect
1	Gain-coupled lasers
1	Gallium Arsenides
1	Gallium Phosphides
1	Growth rate
1	III-V compound
1	Indium Arsenides
1	Infrared laser
1	Interfaces
1	Kinetics
1	Layer thickness
1	Masks
1	Nanomaterial synthesis
1	Optical properties
1	Optical waveguides
1	Optimization
1	Quantum size effect
1	Quantum wells
1	Rapid thermal annealing
1	Self-assembled layers
1	Self-pulsing
1	Silicon
1	Size effect
1	Step
1	Substrates
1	Surface diffusion
1	Thermal annealing
1	XRD

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    H. L. Zhu
}}

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « H. L. Zhu »