Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
Identifieur interne : 002014 ( Chine/Analysis ); précédent : 002013; suivant : 002015Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
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Abstract
The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of growth temperature on the electric properties of In<sub>0.12</sub>Ga<sub>0.88</sub>As/GaAs p-i-n multiple-quantum-well diodes</title><author><name sortKey="Chen, J F" uniqKey="Chen J">J. F. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Wang, P Y" uniqKey="Wang P">P. Y. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Wang, J S" uniqKey="Wang J">J. S. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Wong, H Z" uniqKey="Wong H">H. Z. Wong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0206895</idno><date when="2000-06-01">2000-06-01</date><idno type="stanalyst">PASCAL 00-0206895 AIP</idno><idno type="RBID">Pascal:00-0206895</idno><idno type="wicri:Area/Main/Corpus">013433</idno><idno type="wicri:Area/Main/Repository">011F64</idno><idno type="wicri:Area/Chine/Extraction">002014</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>DLTS</term><term>Deep energy levels</term><term>Defect states</term><term>Electron traps</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor epitaxial layers</term><term>p i n diodes</term><term>quantum well devices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>8530K</term><term>8530V</term><term>7155E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Diode couche intrinsèque</term><term>Couche épitaxique semiconductrice</term><term>Piège électron</term><term>Niveau énergie profond</term><term>Etat défaut</term><term>DLTS</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The electric properties of In<sub>0.12</sub>Ga<sub>0.88</sub>As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics. © 2000 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>87</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of growth temperature on the electric properties of In<sub>0.12</sub>Ga<sub>0.88</sub>As/GaAs p-i-n multiple-quantum-well diodes</s1></fA08><fA11 i1="01" i2="1"><s1>CHEN (J. F.)</s1></fA11><fA11 i1="02" i2="1"><s1>WANG (P. Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>WANG (J. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>WONG (H. Z.)</s1></fA11><fA14 i1="01"><s1>Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>8074-8079</s1></fA20><fA21><s1>2000-06-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0206895</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The electric properties of In<sub>0.12</sub>Ga<sub>0.88</sub>As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. 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