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Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]
Ident.Authors (with country if any)Title
001224 (2008) Annihilation of deep level defects in InP through high temperature annealing
001A42 (2004) Annealing ambient controlled deep defect formation in InP
001A72 (2003-09-15) Properties of Cu/Au Schottky contacts on InGaP layer
001C13 (2003) Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy
001C29 (2003) Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
001C69 (2002-08-15) Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
001E18 (2001-12) Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP
001E33 (2001-09-15) Gamma-Ray Induced Deep Electron Traps in GaInP
001F92 (2000-11-06) Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
002011 (2000-06-15) Phosphorus Vacancy as a Deep Level in AlInP Layers
002014 (2000-06-01) Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
002035 (2000-02-15) Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
002039 (2000-02-01) Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
002109 (2000) Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
002164 (1999-10-18) Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells
002174 (1999-08-15) A dopant-related defect in Te-doped AlInP
002183 (1999-07) Mg-related deep levels in AlInP
002338 (1998-02-15) Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques
002347 (1998) Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth
002410 (1998) Evidence of multimodal patterns of self-organized quantum dots
002453 (1997-07-01) Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates

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