IndiumV3, Chine, Analysis, bibRecord, 001183

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Identifieur interne : 001183 ( Chine/Analysis ); précédent : 001182; suivant : 001184

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Auteurs : RBID : Pascal:08-0144511

Descripteurs français

Pascal (Inist)
- Dopage, Couche interfaciale, Morphologie surface, Méthode MOCVD, Paramètre cristallin, Diffraction RX, Photoluminescence, Interruption, Cristallinité, Addition indium, Croissance latérale, Nitrure de gallium, Couche autoassemblée, Couche contrainte, GaN.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Crystallinity, Doping, Gallium nitride, Indium additions, Interfacial layer, Interrupts, Lateral growth, Lattice parameters, MOCVD, Photoluminescence, Self-assembled layers, Strained layer, Surface morphology, XRD.

Abstract

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interiayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films.

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Pascal:08-0144511

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)</title>
<author><name>JIEJUN WU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>LUBING ZHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>GUOYI ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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</author>
<author><name>XIANGLIN LIU</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1>
<s2>Beijing 100083</s2>
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<country>République populaire de Chine</country>
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<author><name>QINSHENG ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<author><name>ZHANGUO WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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</author>
<author><name>QUANJIE JIA</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of High Energy Physics, Chinese Academy of Science</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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</author>
<author><name>LIPING GUO</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of High Energy Physics, Chinese Academy of Science</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
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</author>
<author><name>TIANDOU HU</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of High Energy Physics, Chinese Academy of Science</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
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<seriesStmt><idno type="ISSN">1862-6300</idno>
<title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystallinity</term>
<term>Doping</term>
<term>Gallium nitride</term>
<term>Indium additions</term>
<term>Interfacial layer</term>
<term>Interrupts</term>
<term>Lateral growth</term>
<term>Lattice parameters</term>
<term>MOCVD</term>
<term>Photoluminescence</term>
<term>Self-assembled layers</term>
<term>Strained layer</term>
<term>Surface morphology</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dopage</term>
<term>Couche interfaciale</term>
<term>Morphologie surface</term>
<term>Méthode MOCVD</term>
<term>Paramètre cristallin</term>
<term>Diffraction RX</term>
<term>Photoluminescence</term>
<term>Interruption</term>
<term>Cristallinité</term>
<term>Addition indium</term>
<term>Croissance latérale</term>
<term>Nitrure de gallium</term>
<term>Couche autoassemblée</term>
<term>Couche contrainte</term>
<term>GaN</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
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<front><div type="abstract" xml:lang="en">Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interiayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films.</div>
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<fA11 i1="01" i2="1"><s1>JIEJUN WU</s1>
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<fA11 i1="02" i2="1"><s1>LUBING ZHAO</s1>
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<fA11 i1="03" i2="1"><s1>GUOYI ZHANG</s1>
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<fA11 i1="04" i2="1"><s1>XIANGLIN LIU</s1>
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<fA11 i1="05" i2="1"><s1>QINSHENG ZHU</s1>
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<fA11 i1="07" i2="1"><s1>QUANJIE JIA</s1>
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<fA11 i1="08" i2="1"><s1>LIPING GUO</s1>
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<fA11 i1="09" i2="1"><s1>TIANDOU HU</s1>
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<fA14 i1="01"><s1>Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University</s1>
<s2>Beijing 100871</s2>
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<sZ>1 aut.</sZ>
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<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1>
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<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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</fA66>
<fC01 i1="01" l="ENG"><s0>Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interiayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films.</s0>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>18</s5>
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<s5>18</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fN21><s1>084</s1>
</fN21>
</pA>
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Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri