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Serveur d'exploration sur l'Indium - Analysis (Chine)

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MO method < MOCVD < MOCVD coatings  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 175.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000022 (2014) Influences of the type of dopant and substrate on ferromagnetism in ZnO:Mn
000069 (2013) Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000156 (2013) Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires
000161 (2013) Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
000196 (2013) Inverted polymer solar cells with a boron-doped zinc oxide layer deposited by metal organic chemical vapor deposition
000225 (2013) Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000227 (2013) Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition
000243 (2013) Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000351 (2012) Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows
000367 (2012) The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition
000381 (2012) Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000525 (2012) Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires
000573 (2012) Effects of AlN interlayer on the transport properties of nearly lattice-matched InAIN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000576 (2012) Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000600 (2012) Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000708 (2011) Structural and optical properties of Ga2O3:In films deposited on MgO (1 0 0) substrates by MOCVD
000784 (2011) Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
000785 (2011) MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers

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