IndiumV3, Chine, Analysis, bibRecord, 000155

Phase transition characteristics of the relaxor-based 0.24PIN-0.51PMN-0.25PT single crystals

Identifieur interne : 000155 ( Chine/Analysis ); précédent : 000154; suivant : 000156

Phase transition characteristics of the relaxor-based 0.24PIN-0.51PMN-0.25PT single crystals

Auteurs : RBID : Pascal:13-0176957

Descripteurs français

Pascal (Inist)
- Propriété diélectrique, Piézoélectricité, Microstructure, Polarisation périodique, Dispersion diélectrique, Hystérésis ferroélectrique, Force coercitive, Relaxeur, Monocristal, Réseau cubique, Indium Plomb Niobate Mixte, Titanate de plomb, Système ternaire, Composé de métal de transition, Magnoniobate de plomb.

English descriptors

KwdEn :
- Coercive force, Cubic lattices, Dielectric dispersion, Dielectric properties, Ferroelectric hysteresis, Indium Lead Niobates Mixed, Lead magnesium niobates, Lead titanates, Microstructure, Monocrystals, Piezoelectricity, Poling, Relaxor, Ternary systems, Transition element compounds.

Abstract

Phase transition characteristics of relaxor-based 0.24PIN-0.51PMN-0.25PT single crystal were investigated through combination of dielectric and piezoelectric properties measurement, hysteresis loop measurements and domain morphology observation with increasing temperature. The phase transition from rhombohedral phase to relaxor cubic phase occurs near 120 °C. The poled crystals exhibit dielectric properties of normal ferroelectrics below 120 °C with frequency independence and show no piezoelectricity over 120 °C with disappearance of resonance and anti-resonance peaks in the impedance spectrum. The poled crystals show clearer domain morphology than that of unpoled crystals. Square hysteresis loop feature was found to transform to double loop like feature under the temperature of about 10 °C lower than 120 °C. The double like hysteresis loop disappears and the hysteresis loop is nearly linear above dielectric maximum temperature ∼150 °C. The more evident dielectric dispersion phenomenon and finer domains with width 1-3 μm are presented in 0.24PIN-0.51PMN-0.25PT crystal, compared to 0.76PMN-0.24PT single crystal.

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Pascal:13-0176957

Le document en format XML

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<author><name>YUHUI WAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University</s1>
<s2>Xi'an 710049</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an 710049</wicri:noRegion>
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<author><name>ZHENRONG LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University</s1>
<s2>Xi'an 710049</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Xi'an 710049</wicri:noRegion>
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<author><name>ZHUO XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University</s1>
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<author><name>SHIJI FAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University</s1>
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<author><name>XI YAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University</s1>
<s2>Xi'an 710049</s2>
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<term>Dielectric properties</term>
<term>Ferroelectric hysteresis</term>
<term>Indium Lead Niobates Mixed</term>
<term>Lead magnesium niobates</term>
<term>Lead titanates</term>
<term>Microstructure</term>
<term>Monocrystals</term>
<term>Piezoelectricity</term>
<term>Poling</term>
<term>Relaxor</term>
<term>Ternary systems</term>
<term>Transition element compounds</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Propriété diélectrique</term>
<term>Piézoélectricité</term>
<term>Microstructure</term>
<term>Polarisation périodique</term>
<term>Dispersion diélectrique</term>
<term>Hystérésis ferroélectrique</term>
<term>Force coercitive</term>
<term>Relaxeur</term>
<term>Monocristal</term>
<term>Réseau cubique</term>
<term>Indium Plomb Niobate Mixte</term>
<term>Titanate de plomb</term>
<term>Système ternaire</term>
<term>Composé de métal de transition</term>
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<front><div type="abstract" xml:lang="en">Phase transition characteristics of relaxor-based 0.24PIN-0.51PMN-0.25PT single crystal were investigated through combination of dielectric and piezoelectric properties measurement, hysteresis loop measurements and domain morphology observation with increasing temperature. The phase transition from rhombohedral phase to relaxor cubic phase occurs near 120 °C. The poled crystals exhibit dielectric properties of normal ferroelectrics below 120 °C with frequency independence and show no piezoelectricity over 120 °C with disappearance of resonance and anti-resonance peaks in the impedance spectrum. The poled crystals show clearer domain morphology than that of unpoled crystals. Square hysteresis loop feature was found to transform to double loop like feature under the temperature of about 10 °C lower than 120 °C. The double like hysteresis loop disappears and the hysteresis loop is nearly linear above dielectric maximum temperature ∼150 °C. The more evident dielectric dispersion phenomenon and finer domains with width 1-3 μm are presented in 0.24PIN-0.51PMN-0.25PT crystal, compared to 0.76PMN-0.24PT single crystal.</div>
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<fC01 i1="01" l="ENG"><s0>Phase transition characteristics of relaxor-based 0.24PIN-0.51PMN-0.25PT single crystal were investigated through combination of dielectric and piezoelectric properties measurement, hysteresis loop measurements and domain morphology observation with increasing temperature. The phase transition from rhombohedral phase to relaxor cubic phase occurs near 120 °C. The poled crystals exhibit dielectric properties of normal ferroelectrics below 120 °C with frequency independence and show no piezoelectricity over 120 °C with disappearance of resonance and anti-resonance peaks in the impedance spectrum. The poled crystals show clearer domain morphology than that of unpoled crystals. Square hysteresis loop feature was found to transform to double loop like feature under the temperature of about 10 °C lower than 120 °C. The double like hysteresis loop disappears and the hysteresis loop is nearly linear above dielectric maximum temperature ∼150 °C. The more evident dielectric dispersion phenomenon and finer domains with width 1-3 μm are presented in 0.24PIN-0.51PMN-0.25PT crystal, compared to 0.76PMN-0.24PT single crystal.</s0>
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<s5>96</s5>
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<s4>CD</s4>
<s5>96</s5>
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<s4>CD</s4>
<s5>96</s5>
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Phase transition characteristics of the relaxor-based 0.24PIN-0.51PMN-0.25PT single crystals

Phase transition characteristics of the relaxor-based 0.24PIN-0.51PMN-0.25PT single crystals

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri