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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Piezoelectric transducers < Piezoelectricity < Piezoreflectance  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]
Ident.Authors (with country if any)Title
000155 (2013) Phase transition characteristics of the relaxor-based 0.24PIN-0.51PMN-0.25PT single crystals
000309 (2013) Complete matrix properties of [001]c and [011]c poled 0.33Pb(In1/2Nb1/2)O3-0.38Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals
000380 (2012) Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations
000507 (2012) High-frequency PIN-PMN-PT single crystal ultrasonic transducer for imaging applications
000606 (2012) Characterization of Pb(In1/2Nb1/2)O3-PbTiO3 ferroelectric crystals grown by top-seeded solution growth method
000611 (2012) Bridgman growth, crystallographic characterization and electrical properties of relaxor-based ferroelectric single crystal PIMNT
000865 (2011) Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects
000900 (2011) Effects of Mn substitution on ferro- and piezoelectric properties of Bi0.86SM0.14FeO3 thin films
000941 (2011) Beam-Mode Piezoelectric Properties of Ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals for Medical Linear Array Applications
000982 (2010) Tunable the emission wavelength of InGaN/GaN multi-quantum wells employing strain-accommodative structures
000A30 (2010) Study on the inhomogeneity of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal along the growth direction
000B40 (2010) Growth of the Relaxor Based Ferroelectric Single Crystals Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 by Vertical Bridgman Technique
000C22 (2010) Characterization and piezoelectric thermal stability of PIN-PMN-PT ternary ceramics near the morphotropic phase boundary
001601 (2006) Influence of the built-in electric field on luminescent properties in self-formed single InxGa1-xN/GaN quantum dots
001635 (2006) Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots
001661 (2006) Donor bound excitons in wurtzite InGaN quantum dots : Effects of built-in electric fields
001732 (2005) Studies of the third-order nonlinear optical susceptibility for InxGa1-xN/GaN cylinder quantum dots
001915 (2004-02-23) Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)]
001946 (2004) Study of stimulated emission from InGaN/GaN multiple quantum well structures
001C14 (2003) Electronic properties of III-V semiconductor heterostructures
001C15 (2003) Electric-field-induced strain and piezoelectric properties of a high Curie temperature Pb(In1/2Nb1/2)O3-PbTiO3single crystal

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