| Ident. | Authors (with country if any) | Title |
|---|
| 000808 |
| Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD |
| 000907 |
| Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method |
| 000C01 |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
| 000E20 |
| Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition |
| 000F05 |
| Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique |
| 000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
| 001186 |
| Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD |
| 001187 |
| Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD |
