| Ident. | Authors (with country if any) | Title |
|---|
| 000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
| 000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
| 000C62 |
| Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution |
| 001183 |
| Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) |
| 001674 |
| Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
| 001B43 |
| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method |
