Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements.
Identifieur interne : 001973 ( Main/Exploration ); précédent : 001972; suivant : 001974Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements.
Auteurs : RBID : pubmed:21386618English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Arsenic, Gallium, Indium, Phosphines.
- methods : Materials Testing, Microscopy, Scanning Tunneling, X-Ray Diffraction.
Abstract
Changes of composition profiles in GaInAs layers sandwiched by InP, due to the layer thicknesses, were measured by the x-ray CTR scattering and cross-sectional STM techniques. Both techniques showed quite similar results, which indicates that the x-ray CTR scattering measurements and analyses give us correct composition profiles both for group-III and group-V atoms in the buried heterostructures non-destructively. Limits of the CTR analysis are discussed, especially on the spatial resolution and composition grading below the bottom interface.
DOI: 10.1088/0953-8984/22/47/474011
PubMed: 21386618
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements.</title><author><name sortKey="Takeda, Yoshikazu" uniqKey="Takeda Y">Yoshikazu Takeda</name><affiliation wicri:level="1"><nlm:affiliation>Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan. takeda@numse.nagoya-u.ac.jp</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603</wicri:regionArea></affiliation></author><author><name sortKey="Tabuchi, Masao" uniqKey="Tabuchi M">Masao Tabuchi</name></author><author><name sortKey="Nakamura, Arao" uniqKey="Nakamura A">Arao Nakamura</name></author></titleStmt><publicationStmt><date when="2010">2010</date><idno type="doi">10.1088/0953-8984/22/47/474011</idno><idno type="RBID">pubmed:21386618</idno><idno type="pmid">21386618</idno><idno type="wicri:Area/Main/Corpus">001528</idno><idno type="wicri:Area/Main/Curation">001528</idno><idno type="wicri:Area/Main/Exploration">001973</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenic (chemistry)</term><term>Gallium (chemistry)</term><term>Indium (chemistry)</term><term>Materials Testing (methods)</term><term>Microscopy, Scanning Tunneling (methods)</term><term>Phosphines (chemistry)</term><term>X-Ray Diffraction (methods)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenic</term><term>Gallium</term><term>Indium</term><term>Phosphines</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Materials Testing</term><term>Microscopy, Scanning Tunneling</term><term>X-Ray Diffraction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Changes of composition profiles in GaInAs layers sandwiched by InP, due to the layer thicknesses, were measured by the x-ray CTR scattering and cross-sectional STM techniques. Both techniques showed quite similar results, which indicates that the x-ray CTR scattering measurements and analyses give us correct composition profiles both for group-III and group-V atoms in the buried heterostructures non-destructively. Limits of the CTR analysis are discussed, especially on the spatial resolution and composition grading below the bottom interface.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">21386618</PMID><DateCreated><Year>2011</Year><Month>03</Month><Day>09</Day></DateCreated><DateCompleted><Year>2011</Year><Month>08</Month><Day>10</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-648X</ISSN><JournalIssue CitedMedium="Internet"><Volume>22</Volume><Issue>47</Issue><PubDate><Year>2010</Year><Month>Dec</Month><Day>1</Day></PubDate></JournalIssue><Title>Journal of physics. Condensed matter : an Institute of Physics journal</Title><ISOAbbreviation>J Phys Condens Matter</ISOAbbreviation></Journal><ArticleTitle>Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements.</ArticleTitle><Pagination><MedlinePgn>474011</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0953-8984/22/47/474011</ELocationID><Abstract><AbstractText>Changes of composition profiles in GaInAs layers sandwiched by InP, due to the layer thicknesses, were measured by the x-ray CTR scattering and cross-sectional STM techniques. Both techniques showed quite similar results, which indicates that the x-ray CTR scattering measurements and analyses give us correct composition profiles both for group-III and group-V atoms in the buried heterostructures non-destructively. Limits of the CTR analysis are discussed, especially on the spatial resolution and composition grading below the bottom interface.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Takeda</LastName><ForeName>Yoshikazu</ForeName><Initials>Y</Initials><Affiliation>Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan. takeda@numse.nagoya-u.ac.jp</Affiliation></Author><Author ValidYN="Y"><LastName>Tabuchi</LastName><ForeName>Masao</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Nakamura</LastName><ForeName>Arao</ForeName><Initials>A</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2010</Year><Month>11</Month><Day>15</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>J Phys Condens Matter</MedlineTA><NlmUniqueID>101165248</NlmUniqueID><ISSNLinking>0953-8984</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Phosphines</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>22398-80-7</RegistryNumber><NameOfSubstance>indium phosphide</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical><Chemical><RegistryNumber>N712M78A8G</RegistryNumber><NameOfSubstance>Arsenic</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenic</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Microscopy, Scanning Tunneling</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Phosphines</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">X-Ray Diffraction</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2010</Year><Month>11</Month><Day>15</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>3</Month><Day>10</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>3</Month><Day>10</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>8</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0953-8984(10)57921-9</ArticleId><ArticleId IdType="doi">10.1088/0953-8984/22/47/474011</ArticleId><ArticleId IdType="pubmed">21386618</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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