Gas detection with vertical InAs nanowire arrays.
Identifieur interne : 001972 ( Main/Exploration ); précédent : 001971; suivant : 001973Gas detection with vertical InAs nanowire arrays.
Auteurs : RBID : pubmed:20503976English descriptors
- KwdEn :
- MESH :
- chemical , analysis : Gases, Nitrogen Dioxide.
- chemical , chemistry : Arsenicals, Indium.
- chemistry : Nanowires.
- instrumentation : Nanotechnology.
- ultrastructure : Nanowires.
- Sensitivity and Specificity.
Abstract
Nanowire-based devices show great promise for next generation (bio)chemical sensors as evidenced by the large volume of high-quality publications. Here, a nanoscale gas sensing device is presented, based on gold-free grown vertical InAs nanowire arrays. The nanowires are contacted Ohmically in their as-grown locations using an air bridge construction, leaving the nanowire surface free for gas adsorption. Noise measurements were performed to determine the measurement resolution for gas detection. These devices are sensitive to NO(2) concentrations well below 100 ppb at room temperature. NO(2) exposure leads to both a reduction in carrier density and electron mobility.
DOI: 10.1021/nl1005405
PubMed: 20503976
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Peter.Offermans@imec-nl.nl</nlm:affiliation><country xml:lang="fr">Pays-Bas</country><wicri:regionArea>Holst Centre/IMEC-NL, Eindhoven</wicri:regionArea></affiliation></author><author><name sortKey="Crego Calama, Mercedes" uniqKey="Crego Calama M">Mercedes Crego-Calama</name></author><author><name sortKey="Brongersma, Sywert H" uniqKey="Brongersma S">Sywert H Brongersma</name></author></titleStmt><publicationStmt><date when="2010">2010</date><idno type="doi">10.1021/nl1005405</idno><idno type="RBID">pubmed:20503976</idno><idno type="pmid">20503976</idno><idno type="wicri:Area/Main/Corpus">001913</idno><idno type="wicri:Area/Main/Curation">001913</idno><idno type="wicri:Area/Main/Exploration">001972</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term><term>Gases (analysis)</term><term>Indium (chemistry)</term><term>Nanotechnology (instrumentation)</term><term>Nanowires (chemistry)</term><term>Nanowires (ultrastructure)</term><term>Nitrogen Dioxide (analysis)</term><term>Sensitivity and Specificity</term></keywords><keywords scheme="MESH" type="chemical" qualifier="analysis" xml:lang="en"><term>Gases</term><term>Nitrogen Dioxide</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term><term>Indium</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Nanotechnology</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Sensitivity and Specificity</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Nanowire-based devices show great promise for next generation (bio)chemical sensors as evidenced by the large volume of high-quality publications. Here, a nanoscale gas sensing device is presented, based on gold-free grown vertical InAs nanowire arrays. The nanowires are contacted Ohmically in their as-grown locations using an air bridge construction, leaving the nanowire surface free for gas adsorption. Noise measurements were performed to determine the measurement resolution for gas detection. These devices are sensitive to NO(2) concentrations well below 100 ppb at room temperature. 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Here, a nanoscale gas sensing device is presented, based on gold-free grown vertical InAs nanowire arrays. The nanowires are contacted Ohmically in their as-grown locations using an air bridge construction, leaving the nanowire surface free for gas adsorption. Noise measurements were performed to determine the measurement resolution for gas detection. These devices are sensitive to NO(2) concentrations well below 100 ppb at room temperature. NO(2) exposure leads to both a reduction in carrier density and electron mobility.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Offermans</LastName><ForeName>Peter</ForeName><Initials>P</Initials><Affiliation>Holst Centre/IMEC-NL, Eindhoven, The Netherlands. 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