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Interface investigations of iron and cobalt metallized porous silicon: AES and FTIR analyses

Identifieur interne : 000066 ( PascalFrancis/Curation ); précédent : 000065; suivant : 000067

Interface investigations of iron and cobalt metallized porous silicon: AES and FTIR analyses

Auteurs : F. Hamadache [Belgique, Algérie] ; C. Renaux [Belgique] ; J.-L. Duvail [France] ; P. Bertrand [Belgique]

Source :

RBID : Pascal:03-0348941

Descripteurs français

English descriptors

Abstract

Porous silicon (PS) is characterized by a very large surface that is very reactive with the external environment. In this work, the chemical composition of the internal surface of both freshly anodically formed and electroplated PS with Fe and Co metals was studied. The samples were analyzed by scanning electron microscopy (SEM), Fourier transform infrared absorption spectroscopy (FTIR) and Auger electron spectroscopy (AES) combined to sputter depth profiling. Mesoporous structures with different morphologies were obtained in p-type Si(100) anodized in ethanoic hydrofluoric acid solutions. We showed that the surface of as-prepared PS is practically oxide-free and H-terminated, whereas the metal deposition process oxidizes the pore walls. Nevertheless, silicon atoms from PS surface are likely bonded to iron and cobalt ones.
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A06       @2 1
A08 01  1  ENG  @1 Interface investigations of iron and cobalt metallized porous silicon: AES and FTIR analyses
A09 01  1  ENG  @1 3rd International Conference Porous Semiconductors - Science and Technology, (PSST-2002), Tenerife, Spain, 10-15 March 2002. Part I
A11 01  1    @1 HAMADACHE (F.)
A11 02  1    @1 RENAUX (C.)
A11 03  1    @1 DUVAIL (J.-L.)
A11 04  1    @1 BERTRAND (P.)
A12 01  1    @1 CANHAM (Leigh) @9 ed.
A12 02  1    @1 NASSIOPOULOU (Androula) @9 ed.
A12 03  1    @1 PARKHUTIK (Vitali) @9 ed.
A14 01      @1 Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, Croix du Sud 1 @2 1348 Louvain-la-Neuve @3 BEL @Z 1 aut. @Z 4 aut.
A14 02      @1 Département des Matériaux et Composants, Université des Sciences et de la Technologie "Houari Boumédiene", B.P. 32 El-Alia @2 16111 Bab-Ezzouar Alger @3 DZA @Z 1 aut.
A14 03      @1 Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3 @2 1348 Louvain-la-Neuve @3 BEL @Z 2 aut.
A14 04      @1 Laboratoire de Physique Cristalline, Institut des Matériaux de Nantes, 2, Rue de la Houssinière @2 44322 Nantes @3 FRA @Z 3 aut.
A15 01      @1 pSiMedica Ltd, Malvern Hills Science Park, Geraldine Road @2 Malvern, Worcs, WR14 3SZ @3 GBR @Z 1 aut.
A15 02      @1 Institute of Microelectronics (IMEL), National Center for Scientific Research "Demokritos", 153 10 Ag. Paraskevi Attikis @2 Athens @3 GRC @Z 2 aut.
A15 03      @1 Departamento de Ingenieria Mecanica y de Materiales, Universidad Politécnica de Valencia, Cami de Vera s/n @2 46022 Valencia @3 ESP @Z 3 aut.
A20       @1 168-174
A21       @1 2003
A23 01      @0 ENG
A43 01      @1 INIST @2 10183A @5 354000111168530290
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C01 01    ENG  @0 Porous silicon (PS) is characterized by a very large surface that is very reactive with the external environment. In this work, the chemical composition of the internal surface of both freshly anodically formed and electroplated PS with Fe and Co metals was studied. The samples were analyzed by scanning electron microscopy (SEM), Fourier transform infrared absorption spectroscopy (FTIR) and Auger electron spectroscopy (AES) combined to sputter depth profiling. Mesoporous structures with different morphologies were obtained in p-type Si(100) anodized in ethanoic hydrofluoric acid solutions. We showed that the surface of as-prepared PS is practically oxide-free and H-terminated, whereas the metal deposition process oxidizes the pore walls. Nevertheless, silicon atoms from PS surface are likely bonded to iron and cobalt ones.
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C02 03  X    @0 240
C03 01  X  FRE  @0 Etude expérimentale @5 01
C03 01  X  ENG  @0 Experimental study @5 01
C03 01  X  GER  @0 Experimentelle Untersuchung @5 01
C03 01  X  SPA  @0 Estudio experimental @5 01
C03 02  X  FRE  @0 Semiconducteur @5 02
C03 02  X  ENG  @0 Semiconductor materials @5 02
C03 02  X  GER  @0 Halbleiter @5 02
C03 02  X  SPA  @0 Semiconductor(material) @5 02
C03 03  X  FRE  @0 Silicium @2 NC @5 03
C03 03  X  ENG  @0 Silicon @2 NC @5 03
C03 03  X  GER  @0 Silicium @2 NC @5 03
C03 03  X  SPA  @0 Silicio @2 NC @5 03
C03 04  X  FRE  @0 Matériau poreux @5 04
C03 04  X  ENG  @0 Porous material @5 04
C03 04  X  GER  @0 Poroeser Werkstoff @5 04
C03 04  X  SPA  @0 Material poroso @5 04
C03 05  X  FRE  @0 Mésoporosité @5 05
C03 05  X  ENG  @0 Mesoporosity @5 05
C03 05  X  SPA  @0 Mesoporosidad @5 05
C03 06  X  FRE  @0 Préparation @5 06
C03 06  X  ENG  @0 Preparation @5 06
C03 06  X  GER  @0 Vorbereitung @5 06
C03 06  X  SPA  @0 Preparación @5 06
C03 07  X  FRE  @0 Anodisation @5 07
C03 07  X  ENG  @0 Anodizing @5 07
C03 07  X  GER  @0 Elektrolytisches Oxidieren @5 07
C03 07  X  SPA  @0 Anodización @5 07
C03 08  X  FRE  @0 Traitement surface @5 08
C03 08  X  ENG  @0 Surface treatment @5 08
C03 08  X  GER  @0 Oberflaechenbehandlung @5 08
C03 08  X  SPA  @0 Tratamiento superficie @5 08
C03 09  X  FRE  @0 Dépôt électrolytique @5 09
C03 09  X  ENG  @0 Electrodeposition @5 09
C03 09  X  GER  @0 Elektroplattieren @5 09
C03 09  X  SPA  @0 Depósito electrolítico @5 09
C03 10  X  FRE  @0 Revêtement métallique @5 10
C03 10  X  ENG  @0 Metal coating @5 10
C03 10  X  GER  @0 Metallischer Ueberzug @5 10
C03 10  X  SPA  @0 Revestimiento metálico @5 10
C03 11  X  FRE  @0 Fer @2 NC @5 11
C03 11  X  ENG  @0 Iron @2 NC @5 11
C03 11  X  GER  @0 Eisen @2 NC @5 11
C03 11  X  SPA  @0 Hierro @2 NC @5 11
C03 12  X  FRE  @0 Cobalt @2 NC @5 12
C03 12  X  ENG  @0 Cobalt @2 NC @5 12
C03 12  X  GER  @0 Cobalt @2 NC @5 12
C03 12  X  SPA  @0 Cobalto @2 NC @5 12
C03 13  X  FRE  @0 Morphologie @5 14
C03 13  X  ENG  @0 Morphology @5 14
C03 13  X  GER  @0 Morphologie @5 14
C03 13  X  SPA  @0 Morfología @5 14
C03 14  3  FRE  @0 Terminaison surface @5 15
C03 14  3  ENG  @0 Surface termination @5 15
C03 15  X  FRE  @0 6835 @2 PAC @4 INC @5 57
C03 16  X  FRE  @0 Si @4 INC @5 93
C03 17  X  FRE  @0 Fe @4 INC @5 94
C03 18  X  FRE  @0 Co @4 INC @5 95
C07 01  X  FRE  @0 Non métal @2 NC @5 81
C07 01  X  ENG  @0 Non metal @2 NC @5 81
C07 01  X  GER  @0 Nichtmetall @2 NC @5 81
C07 01  X  SPA  @0 No metal @2 NC @5 81
C07 02  X  FRE  @0 Métal transition @2 NC @5 82
C07 02  X  ENG  @0 Transition metal @2 NC @5 82
C07 02  X  GER  @0 Uebergangsmetalle @2 NC @5 82
C07 02  X  SPA  @0 Metal transición @2 NC @5 82
N21       @1 246
N82       @1 PSI
pR  
A30 01  1  ENG  @1 International Conference Porous Semiconductors - Science and Technology @2 3 @3 Tenerife ESP @4 2002-03-10

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Le document en format XML

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<fC02 i1="01" i2="X">
<s0>001C01J08</s0>
</fC02>
<fC02 i1="02" i2="3">
<s0>001B60H35</s0>
</fC02>
<fC02 i1="03" i2="X">
<s0>240</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE">
<s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG">
<s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="GER">
<s0>Experimentelle Untersuchung</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA">
<s0>Estudio experimental</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE">
<s0>Semiconducteur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG">
<s0>Semiconductor materials</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="GER">
<s0>Halbleiter</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA">
<s0>Semiconductor(material)</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE">
<s0>Silicium</s0>
<s2>NC</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG">
<s0>Silicon</s0>
<s2>NC</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="GER">
<s0>Silicium</s0>
<s2>NC</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA">
<s0>Silicio</s0>
<s2>NC</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE">
<s0>Matériau poreux</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG">
<s0>Porous material</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="GER">
<s0>Poroeser Werkstoff</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA">
<s0>Material poroso</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE">
<s0>Mésoporosité</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG">
<s0>Mesoporosity</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA">
<s0>Mesoporosidad</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE">
<s0>Préparation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG">
<s0>Preparation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="GER">
<s0>Vorbereitung</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA">
<s0>Preparación</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE">
<s0>Anodisation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG">
<s0>Anodizing</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="GER">
<s0>Elektrolytisches Oxidieren</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA">
<s0>Anodización</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE">
<s0>Traitement surface</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG">
<s0>Surface treatment</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="GER">
<s0>Oberflaechenbehandlung</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA">
<s0>Tratamiento superficie</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE">
<s0>Dépôt électrolytique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG">
<s0>Electrodeposition</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="GER">
<s0>Elektroplattieren</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA">
<s0>Depósito electrolítico</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE">
<s0>Revêtement métallique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG">
<s0>Metal coating</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="GER">
<s0>Metallischer Ueberzug</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA">
<s0>Revestimiento metálico</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE">
<s0>Fer</s0>
<s2>NC</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG">
<s0>Iron</s0>
<s2>NC</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="GER">
<s0>Eisen</s0>
<s2>NC</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA">
<s0>Hierro</s0>
<s2>NC</s2>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE">
<s0>Cobalt</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG">
<s0>Cobalt</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="GER">
<s0>Cobalt</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA">
<s0>Cobalto</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE">
<s0>Morphologie</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG">
<s0>Morphology</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="GER">
<s0>Morphologie</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA">
<s0>Morfología</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE">
<s0>Terminaison surface</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG">
<s0>Surface termination</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE">
<s0>6835</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE">
<s0>Si</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE">
<s0>Fe</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE">
<s0>Co</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE">
<s0>Non métal</s0>
<s2>NC</s2>
<s5>81</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG">
<s0>Non metal</s0>
<s2>NC</s2>
<s5>81</s5>
</fC07>
<fC07 i1="01" i2="X" l="GER">
<s0>Nichtmetall</s0>
<s2>NC</s2>
<s5>81</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA">
<s0>No metal</s0>
<s2>NC</s2>
<s5>81</s5>
</fC07>
<fC07 i1="02" i2="X" l="FRE">
<s0>Métal transition</s0>
<s2>NC</s2>
<s5>82</s5>
</fC07>
<fC07 i1="02" i2="X" l="ENG">
<s0>Transition metal</s0>
<s2>NC</s2>
<s5>82</s5>
</fC07>
<fC07 i1="02" i2="X" l="GER">
<s0>Uebergangsmetalle</s0>
<s2>NC</s2>
<s5>82</s5>
</fC07>
<fC07 i1="02" i2="X" l="SPA">
<s0>Metal transición</s0>
<s2>NC</s2>
<s5>82</s5>
</fC07>
<fN21>
<s1>246</s1>
</fN21>
<fN82>
<s1>PSI</s1>
</fN82>
</pA>
<pR>
<fA30 i1="01" i2="1" l="ENG">
<s1>International Conference Porous Semiconductors - Science and Technology</s1>
<s2>3</s2>
<s3>Tenerife ESP</s3>
<s4>2002-03-10</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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