CobaltMaghrebV1, PascalFrancis, Curation, bibRecord, 000043

GMR enhancement in spin valves structures with nano-semiconducting layer

Identifieur interne : 000043 ( PascalFrancis/Curation ); précédent : 000042; suivant : 000044

GMR enhancement in spin valves structures with nano-semiconducting layer

Auteurs : A. Dinia [France] ; M. Guth [France] ; S. Colis [France] ; G. Schmerber [France] ; C. Ulhacq [France] ; H. Errahmani [Maroc] ; A. Berrada [Maroc]

Source :

Journal of magnetism and magnetic materials [ 0304-8853 ] ; 2002.

RBID : Pascal:02-0357821

Descripteurs français

Pascal (Inist)
- Magnétorésistance géante, Vanne spin, Structure magnétique, Pulvérisation faisceau ionique, Dureté, Sous système, Interface, Réflexion spéculaire, Nanostructure, Semiconducteur, Cobalt, Ruthénium, Bicouche, Couche épaisse, Fer, Co, Ru, Fe, 7570P, 8115C.
Wicri :
- topic : Cobalt, Fer.

English descriptors

KwdEn :
- Bilayers, Cobalt, Giant magnetoresistance, Hardness, Interfaces, Ion beam sputtering, Iron, Magnetic structure, Nanostructures, Ruthenium, Semiconductor materials, Specular reflection, Spin valve, Subsystem, Thick films.

Abstract

We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe_5nm/Co_0.5nm/Cu_3nm/Co_3nm/Ru_0.5nm/Co_3nm/Cu_2nm/Cr_2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.

A01	`01`	`1`		`@0 0304-8853`
A02	`01`			`@0 JMMMDC`
A03		`1`		`@0 J. magn. magn. mater.`
A05				`@2 240`
A06				`@2 1-3`
A08	`01`	`1`	`ENG`	`@1 GMR enhancement in spin valves structures with nano-semiconducting layer`
A09	`01`	`1`	`ENG`	`@1 Proceedings of the 4th international symposium on metallic multilayers (MML'01), 24-29 June 2001, Aachen, Germany`
A11	`01`	`1`		`@1 DINIA (A.)`
A11	`02`	`1`		`@1 GUTH (M.)`
A11	`03`	`1`		`@1 COLIS (S.)`
A11	`04`	`1`		`@1 SCHMERBER (G.)`
A11	`05`	`1`		`@1 ULHACQ (C.)`
A11	`06`	`1`		`@1 ERRAHMANI (H.)`
A11	`07`	`1`		`@1 BERRADA (A.)`
A12	`01`	`1`		`@1 GÜNTHERODT (G.) @9 ed.`
A12	`02`	`1`		`@1 ZABEL (H.) @9 ed.`
A14	`01`			`@1 IPCMS-GEMM (7504, CNRS), ULP-ECPM, 23 Rue du Loess @2 67037 Strasbourg @3 FRA @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut. @Z 5 aut.`
A14	`02`			`@1 Department de Physique, Faculté des Sciences, B.P. 1014 @2 Rabat @3 MAR @Z 6 aut. @Z 7 aut.`
A15	`01`			`@1 RWTH Aachen @3 DEU @Z 1 aut.`
A15	`02`			`@1 Ruhr-Universität Bochum @3 DEU @Z 2 aut.`
A20				`@1 196-199`
A21				`@1 2002`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 17230 @5 354000101273980550`
A44				`@0 0000 @1 © 2002 INIST-CNRS. All rights reserved.`
A45				`@0 6 ref.`
A47	`01`	`1`		`@0 02-0357821`
A60				`@1 P @2 C`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of magnetism and magnetic materials`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	@0 We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe_5nm/Co_0.5nm/Cu_3nm/Co_3nm/Ru_0.5nm/Co_3nm/Cu_2nm/Cr_2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.
C02	`01`	`3`		`@0 001B70E70P`
C02	`02`	`3`		`@0 001B80A15C`
C03	`01`	`3`	`FRE`	`@0 Magnétorésistance géante @5 02`
C03	`01`	`3`	`ENG`	`@0 Giant magnetoresistance @5 02`
C03	`02`	`3`	`FRE`	`@0 Vanne spin @5 03`
C03	`02`	`3`	`ENG`	`@0 Spin valve @5 03`
C03	`03`	`3`	`FRE`	`@0 Structure magnétique @5 04`
C03	`03`	`3`	`ENG`	`@0 Magnetic structure @5 04`
C03	`04`	`X`	`FRE`	`@0 Pulvérisation faisceau ionique @5 05`
C03	`04`	`X`	`ENG`	`@0 Ion beam sputtering @5 05`
C03	`04`	`X`	`SPA`	`@0 Pulverización haz iónico @5 05`
C03	`05`	`3`	`FRE`	`@0 Dureté @5 06`
C03	`05`	`3`	`ENG`	`@0 Hardness @5 06`
C03	`06`	`X`	`FRE`	`@0 Sous système @5 07`
C03	`06`	`X`	`ENG`	`@0 Subsystem @5 07`
C03	`06`	`X`	`SPA`	`@0 Subsistema @5 07`
C03	`07`	`3`	`FRE`	`@0 Interface @5 08`
C03	`07`	`3`	`ENG`	`@0 Interfaces @5 08`
C03	`08`	`X`	`FRE`	`@0 Réflexion spéculaire @5 10`
C03	`08`	`X`	`ENG`	`@0 Specular reflection @5 10`
C03	`08`	`X`	`SPA`	`@0 Reflexión especular @5 10`
C03	`09`	`3`	`FRE`	`@0 Nanostructure @5 15`
C03	`09`	`3`	`ENG`	`@0 Nanostructures @5 15`
C03	`10`	`3`	`FRE`	`@0 Semiconducteur @5 16`
C03	`10`	`3`	`ENG`	`@0 Semiconductor materials @5 16`
C03	`11`	`3`	`FRE`	`@0 Cobalt @2 NC @5 17`
C03	`11`	`3`	`ENG`	`@0 Cobalt @2 NC @5 17`
C03	`12`	`3`	`FRE`	`@0 Ruthénium @2 NC @5 18`
C03	`12`	`3`	`ENG`	`@0 Ruthenium @2 NC @5 18`
C03	`13`	`3`	`FRE`	`@0 Bicouche @5 19`
C03	`13`	`3`	`ENG`	`@0 Bilayers @5 19`
C03	`14`	`3`	`FRE`	`@0 Couche épaisse @5 20`
C03	`14`	`3`	`ENG`	`@0 Thick films @5 20`
C03	`15`	`3`	`FRE`	`@0 Fer @2 NC @5 21`
C03	`15`	`3`	`ENG`	`@0 Iron @2 NC @5 21`
C03	`16`	`3`	`FRE`	`@0 Co @4 INC @5 52`
C03	`17`	`3`	`FRE`	`@0 Ru @4 INC @5 53`
C03	`18`	`3`	`FRE`	`@0 Fe @4 INC @5 54`
C03	`19`	`3`	`FRE`	`@0 7570P @2 PAC @4 INC @5 56`
C03	`20`	`3`	`FRE`	`@0 8115C @2 PAC @4 INC @5 57`
C07	`01`	`3`	`FRE`	`@0 Métal transition @5 48`
C07	`01`	`3`	`ENG`	`@0 Transition elements @5 48`
C07	`02`	`3`	`FRE`	`@0 Composé minéral @5 49`
C07	`02`	`3`	`ENG`	`@0 Inorganic compounds @5 49`
N21				`@1 196`
N82				`@1 PSI`

A30	`01`	`1`	`ENG`	`@1 MML'01: International Symposium on Metallic Multilayers @2 4 @3 Aachen DEU @4 2001-06-24`

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Pascal:02-0357821

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bilayers</term>
<term>Cobalt</term>
<term>Giant magnetoresistance</term>
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<term>Interfaces</term>
<term>Ion beam sputtering</term>
<term>Iron</term>
<term>Magnetic structure</term>
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<term>Ruthenium</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Magnétorésistance géante</term>
<term>Vanne spin</term>
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<term>Pulvérisation faisceau ionique</term>
<term>Dureté</term>
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<term>Interface</term>
<term>Réflexion spéculaire</term>
<term>Nanostructure</term>
<term>Semiconducteur</term>
<term>Cobalt</term>
<term>Ruthénium</term>
<term>Bicouche</term>
<term>Couche épaisse</term>
<term>Fer</term>
<term>Co</term>
<term>Ru</term>
<term>Fe</term>
<term>7570P</term>
<term>8115C</term>
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<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Cobalt</term>
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<front><div type="abstract" xml:lang="en">We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe<sub>5nm</sub>
/Co<sub>0.5nm</sub>
/Cu<sub>3nm</sub>
/Co<sub>3nm</sub>
/Ru<sub>0.5nm</sub>
/Co<sub>3nm</sub>
/Cu<sub>2nm</sub>
/Cr<sub>2nm</sub>
. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.</div>
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<fA21><s1>2002</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>17230</s2>
<s5>354000101273980550</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2002 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>6 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>02-0357821</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of magnetism and magnetic materials</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe<sub>5nm</sub>
/Co<sub>0.5nm</sub>
/Cu<sub>3nm</sub>
/Co<sub>3nm</sub>
/Ru<sub>0.5nm</sub>
/Co<sub>3nm</sub>
/Cu<sub>2nm</sub>
/Cr<sub>2nm</sub>
. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70E70P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15C</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Magnétorésistance géante</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Giant magnetoresistance</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Vanne spin</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Spin valve</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Structure magnétique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Magnetic structure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Pulvérisation faisceau ionique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Ion beam sputtering</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Pulverización haz iónico</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Dureté</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Hardness</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Sous système</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Subsystem</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Subsistema</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Interface</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Réflexion spéculaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Specular reflection</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Reflexión especular</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Cobalt</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Cobalt</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Ruthénium</s0>
<s2>NC</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Ruthenium</s0>
<s2>NC</s2>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Bicouche</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Bilayers</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Couche épaisse</s0>
<s5>20</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Thick films</s0>
<s5>20</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Fer</s0>
<s2>NC</s2>
<s5>21</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Iron</s0>
<s2>NC</s2>
<s5>21</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Co</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Ru</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Fe</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7570P</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8115C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Métal transition</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Transition elements</s0>
<s5>48</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>49</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>49</s5>
</fC07>
<fN21><s1>196</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MML'01: International Symposium on Metallic Multilayers</s1>
<s2>4</s2>
<s3>Aachen DEU</s3>
<s4>2001-06-24</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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GMR enhancement in spin valves structures with nano-semiconducting layer

GMR enhancement in spin valves structures with nano-semiconducting layer

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