GMR enhancement in spin valves structures with nano-semiconducting layer
Identifieur interne :
000252 ( PascalFrancis/Corpus );
précédent :
000251;
suivant :
000253
GMR enhancement in spin valves structures with nano-semiconducting layer
Auteurs : A. Dinia ;
M. Guth ;
S. Colis ;
G. Schmerber ;
C. Ulhacq ;
H. Errahmani ;
A. BerradaSource :
-
Journal of magnetism and magnetic materials [ 0304-8853 ] ; 2002.
RBID : Pascal:02-0357821
Descripteurs français
- Pascal (Inist)
- Magnétorésistance géante,
Vanne spin,
Structure magnétique,
Pulvérisation faisceau ionique,
Dureté,
Sous système,
Interface,
Réflexion spéculaire,
Nanostructure,
Semiconducteur,
Cobalt,
Ruthénium,
Bicouche,
Couche épaisse,
Fer,
Co,
Ru,
Fe,
7570P,
8115C.
English descriptors
- KwdEn :
- Bilayers,
Cobalt,
Giant magnetoresistance,
Hardness,
Interfaces,
Ion beam sputtering,
Iron,
Magnetic structure,
Nanostructures,
Ruthenium,
Semiconductor materials,
Specular reflection,
Spin valve,
Subsystem,
Thick films.
Abstract
We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe5nm/Co0.5nm/Cu3nm/Co3nm/Ru0.5nm/Co3nm/Cu2nm/Cr2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.
Notice en format standard (ISO 2709)
Pour connaître la documentation sur le format Inist Standard.
pA |
A01 | 01 | 1 | | @0 0304-8853 |
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A02 | 01 | | | @0 JMMMDC |
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A03 | | 1 | | @0 J. magn. magn. mater. |
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A05 | | | | @2 240 |
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A06 | | | | @2 1-3 |
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A08 | 01 | 1 | ENG | @1 GMR enhancement in spin valves structures with nano-semiconducting layer |
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A09 | 01 | 1 | ENG | @1 Proceedings of the 4th international symposium on metallic multilayers (MML'01), 24-29 June 2001, Aachen, Germany |
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A11 | 01 | 1 | | @1 DINIA (A.) |
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A11 | 02 | 1 | | @1 GUTH (M.) |
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A11 | 03 | 1 | | @1 COLIS (S.) |
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A11 | 04 | 1 | | @1 SCHMERBER (G.) |
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A11 | 05 | 1 | | @1 ULHACQ (C.) |
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A11 | 06 | 1 | | @1 ERRAHMANI (H.) |
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A11 | 07 | 1 | | @1 BERRADA (A.) |
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A12 | 01 | 1 | | @1 GÜNTHERODT (G.) @9 ed. |
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A12 | 02 | 1 | | @1 ZABEL (H.) @9 ed. |
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A14 | 01 | | | @1 IPCMS-GEMM (7504, CNRS), ULP-ECPM, 23 Rue du Loess @2 67037 Strasbourg @3 FRA @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut. @Z 5 aut. |
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A14 | 02 | | | @1 Department de Physique, Faculté des Sciences, B.P. 1014 @2 Rabat @3 MAR @Z 6 aut. @Z 7 aut. |
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A15 | 01 | | | @1 RWTH Aachen @3 DEU @Z 1 aut. |
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A15 | 02 | | | @1 Ruhr-Universität Bochum @3 DEU @Z 2 aut. |
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A20 | | | | @1 196-199 |
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A21 | | | | @1 2002 |
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A23 | 01 | | | @0 ENG |
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A43 | 01 | | | @1 INIST @2 17230 @5 354000101273980550 |
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A44 | | | | @0 0000 @1 © 2002 INIST-CNRS. All rights reserved. |
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A45 | | | | @0 6 ref. |
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A47 | 01 | 1 | | @0 02-0357821 |
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A60 | | | | @1 P @2 C |
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A61 | | | | @0 A |
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A64 | 01 | 1 | | @0 Journal of magnetism and magnetic materials |
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A66 | 01 | | | @0 NLD |
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C01 | 01 | | ENG | @0 We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe5nm/Co0.5nm/Cu3nm/Co3nm/Ru0.5nm/Co3nm/Cu2nm/Cr2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface. |
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C02 | 01 | 3 | | @0 001B70E70P |
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C02 | 02 | 3 | | @0 001B80A15C |
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C03 | 01 | 3 | FRE | @0 Magnétorésistance géante @5 02 |
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C03 | 01 | 3 | ENG | @0 Giant magnetoresistance @5 02 |
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C03 | 02 | 3 | FRE | @0 Vanne spin @5 03 |
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C03 | 02 | 3 | ENG | @0 Spin valve @5 03 |
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C03 | 03 | 3 | FRE | @0 Structure magnétique @5 04 |
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C03 | 03 | 3 | ENG | @0 Magnetic structure @5 04 |
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C03 | 04 | X | FRE | @0 Pulvérisation faisceau ionique @5 05 |
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C03 | 04 | X | ENG | @0 Ion beam sputtering @5 05 |
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C03 | 04 | X | SPA | @0 Pulverización haz iónico @5 05 |
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C03 | 05 | 3 | FRE | @0 Dureté @5 06 |
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C03 | 05 | 3 | ENG | @0 Hardness @5 06 |
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C03 | 06 | X | FRE | @0 Sous système @5 07 |
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C03 | 06 | X | ENG | @0 Subsystem @5 07 |
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C03 | 06 | X | SPA | @0 Subsistema @5 07 |
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C03 | 07 | 3 | FRE | @0 Interface @5 08 |
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C03 | 07 | 3 | ENG | @0 Interfaces @5 08 |
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C03 | 08 | X | FRE | @0 Réflexion spéculaire @5 10 |
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C03 | 08 | X | ENG | @0 Specular reflection @5 10 |
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C03 | 08 | X | SPA | @0 Reflexión especular @5 10 |
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C03 | 09 | 3 | FRE | @0 Nanostructure @5 15 |
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C03 | 09 | 3 | ENG | @0 Nanostructures @5 15 |
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C03 | 10 | 3 | FRE | @0 Semiconducteur @5 16 |
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C03 | 10 | 3 | ENG | @0 Semiconductor materials @5 16 |
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C03 | 11 | 3 | FRE | @0 Cobalt @2 NC @5 17 |
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C03 | 11 | 3 | ENG | @0 Cobalt @2 NC @5 17 |
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C03 | 12 | 3 | FRE | @0 Ruthénium @2 NC @5 18 |
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C03 | 12 | 3 | ENG | @0 Ruthenium @2 NC @5 18 |
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C03 | 13 | 3 | FRE | @0 Bicouche @5 19 |
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C03 | 13 | 3 | ENG | @0 Bilayers @5 19 |
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C03 | 14 | 3 | FRE | @0 Couche épaisse @5 20 |
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C03 | 14 | 3 | ENG | @0 Thick films @5 20 |
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C03 | 15 | 3 | FRE | @0 Fer @2 NC @5 21 |
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C03 | 15 | 3 | ENG | @0 Iron @2 NC @5 21 |
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C03 | 16 | 3 | FRE | @0 Co @4 INC @5 52 |
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C03 | 17 | 3 | FRE | @0 Ru @4 INC @5 53 |
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C03 | 18 | 3 | FRE | @0 Fe @4 INC @5 54 |
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C03 | 19 | 3 | FRE | @0 7570P @2 PAC @4 INC @5 56 |
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C03 | 20 | 3 | FRE | @0 8115C @2 PAC @4 INC @5 57 |
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C07 | 01 | 3 | FRE | @0 Métal transition @5 48 |
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C07 | 01 | 3 | ENG | @0 Transition elements @5 48 |
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C07 | 02 | 3 | FRE | @0 Composé minéral @5 49 |
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C07 | 02 | 3 | ENG | @0 Inorganic compounds @5 49 |
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N21 | | | | @1 196 |
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N82 | | | | @1 PSI |
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|
pR |
A30 | 01 | 1 | ENG | @1 MML'01: International Symposium on Metallic Multilayers @2 4 @3 Aachen DEU @4 2001-06-24 |
---|
|
Format Inist (serveur)
NO : | PASCAL 02-0357821 INIST |
ET : | GMR enhancement in spin valves structures with nano-semiconducting layer |
AU : | DINIA (A.); GUTH (M.); COLIS (S.); SCHMERBER (G.); ULHACQ (C.); ERRAHMANI (H.); BERRADA (A.); GÜNTHERODT (G.); ZABEL (H.) |
AF : | IPCMS-GEMM (7504, CNRS), ULP-ECPM, 23 Rue du Loess/67037 Strasbourg/France (1 aut., 2 aut., 3 aut., 4 aut., 5 aut.); Department de Physique, Faculté des Sciences, B.P. 1014/Rabat/Maroc (6 aut., 7 aut.); RWTH Aachen/Allemagne (1 aut.); Ruhr-Universität Bochum/Allemagne (2 aut.) |
DT : | Publication en série; Congrès; Niveau analytique |
SO : | Journal of magnetism and magnetic materials; ISSN 0304-8853; Coden JMMMDC; Pays-Bas; Da. 2002; Vol. 240; No. 1-3; Pp. 196-199; Bibl. 6 ref. |
LA : | Anglais |
EA : | We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe5nm/Co0.5nm/Cu3nm/Co3nm/Ru0.5nm/Co3nm/Cu2nm/Cr2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface. |
CC : | 001B70E70P; 001B80A15C |
FD : | Magnétorésistance géante; Vanne spin; Structure magnétique; Pulvérisation faisceau ionique; Dureté; Sous système; Interface; Réflexion spéculaire; Nanostructure; Semiconducteur; Cobalt; Ruthénium; Bicouche; Couche épaisse; Fer; Co; Ru; Fe; 7570P; 8115C |
FG : | Métal transition; Composé minéral |
ED : | Giant magnetoresistance; Spin valve; Magnetic structure; Ion beam sputtering; Hardness; Subsystem; Interfaces; Specular reflection; Nanostructures; Semiconductor materials; Cobalt; Ruthenium; Bilayers; Thick films; Iron |
EG : | Transition elements; Inorganic compounds |
SD : | Pulverización haz iónico; Subsistema; Reflexión especular |
LO : | INIST-17230.354000101273980550 |
ID : | 02-0357821 |
Links to Exploration step
Pascal:02-0357821
Le document en format XML
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">GMR enhancement in spin valves structures with nano-semiconducting layer</title>
<author><name sortKey="Dinia, A" sort="Dinia, A" uniqKey="Dinia A" first="A." last="Dinia">A. Dinia</name>
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<author><name sortKey="Guth, M" sort="Guth, M" uniqKey="Guth M" first="M." last="Guth">M. Guth</name>
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<author><name sortKey="Colis, S" sort="Colis, S" uniqKey="Colis S" first="S." last="Colis">S. Colis</name>
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<series><title level="j" type="main">Journal of magnetism and magnetic materials</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bilayers</term>
<term>Cobalt</term>
<term>Giant magnetoresistance</term>
<term>Hardness</term>
<term>Interfaces</term>
<term>Ion beam sputtering</term>
<term>Iron</term>
<term>Magnetic structure</term>
<term>Nanostructures</term>
<term>Ruthenium</term>
<term>Semiconductor materials</term>
<term>Specular reflection</term>
<term>Spin valve</term>
<term>Subsystem</term>
<term>Thick films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Magnétorésistance géante</term>
<term>Vanne spin</term>
<term>Structure magnétique</term>
<term>Pulvérisation faisceau ionique</term>
<term>Dureté</term>
<term>Sous système</term>
<term>Interface</term>
<term>Réflexion spéculaire</term>
<term>Nanostructure</term>
<term>Semiconducteur</term>
<term>Cobalt</term>
<term>Ruthénium</term>
<term>Bicouche</term>
<term>Couche épaisse</term>
<term>Fer</term>
<term>Co</term>
<term>Ru</term>
<term>Fe</term>
<term>7570P</term>
<term>8115C</term>
</keywords>
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<front><div type="abstract" xml:lang="en">We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe<sub>5nm</sub>
/Co<sub>0.5nm</sub>
/Cu<sub>3nm</sub>
/Co<sub>3nm</sub>
/Ru<sub>0.5nm</sub>
/Co<sub>3nm</sub>
/Cu<sub>2nm</sub>
/Cr<sub>2nm</sub>
. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0304-8853</s0>
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<fA08 i1="01" i2="1" l="ENG"><s1>GMR enhancement in spin valves structures with nano-semiconducting layer</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 4th international symposium on metallic multilayers (MML'01), 24-29 June 2001, Aachen, Germany</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>DINIA (A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GUTH (M.)</s1>
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<fA11 i1="03" i2="1"><s1>COLIS (S.)</s1>
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<fA11 i1="04" i2="1"><s1>SCHMERBER (G.)</s1>
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<fA11 i1="05" i2="1"><s1>ULHACQ (C.)</s1>
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<fA11 i1="06" i2="1"><s1>ERRAHMANI (H.)</s1>
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<fA11 i1="07" i2="1"><s1>BERRADA (A.)</s1>
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<fA12 i1="01" i2="1"><s1>GÜNTHERODT (G.)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>ZABEL (H.)</s1>
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</fA12>
<fA14 i1="01"><s1>IPCMS-GEMM (7504, CNRS), ULP-ECPM, 23 Rue du Loess</s1>
<s2>67037 Strasbourg</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department de Physique, Faculté des Sciences, B.P. 1014</s1>
<s2>Rabat</s2>
<s3>MAR</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>RWTH Aachen</s1>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Ruhr-Universität Bochum</s1>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA20><s1>196-199</s1>
</fA20>
<fA21><s1>2002</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>17230</s2>
<s5>354000101273980550</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2002 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>6 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>02-0357821</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA64 i1="01" i2="1"><s0>Journal of magnetism and magnetic materials</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe<sub>5nm</sub>
/Co<sub>0.5nm</sub>
/Cu<sub>3nm</sub>
/Co<sub>3nm</sub>
/Ru<sub>0.5nm</sub>
/Co<sub>3nm</sub>
/Cu<sub>2nm</sub>
/Cr<sub>2nm</sub>
. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70E70P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15C</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Magnétorésistance géante</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Giant magnetoresistance</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Vanne spin</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Spin valve</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Structure magnétique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Magnetic structure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Pulvérisation faisceau ionique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Ion beam sputtering</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Pulverización haz iónico</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Dureté</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Hardness</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Sous système</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Subsystem</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Subsistema</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Interface</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Réflexion spéculaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Specular reflection</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Reflexión especular</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Cobalt</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Cobalt</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Ruthénium</s0>
<s2>NC</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Ruthenium</s0>
<s2>NC</s2>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Bicouche</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Bilayers</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Couche épaisse</s0>
<s5>20</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Thick films</s0>
<s5>20</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Fer</s0>
<s2>NC</s2>
<s5>21</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Iron</s0>
<s2>NC</s2>
<s5>21</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Co</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Ru</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Fe</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7570P</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8115C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Métal transition</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Transition elements</s0>
<s5>48</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>49</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>49</s5>
</fC07>
<fN21><s1>196</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MML'01: International Symposium on Metallic Multilayers</s1>
<s2>4</s2>
<s3>Aachen DEU</s3>
<s4>2001-06-24</s4>
</fA30>
</pR>
</standard>
<server><NO>PASCAL 02-0357821 INIST</NO>
<ET>GMR enhancement in spin valves structures with nano-semiconducting layer</ET>
<AU>DINIA (A.); GUTH (M.); COLIS (S.); SCHMERBER (G.); ULHACQ (C.); ERRAHMANI (H.); BERRADA (A.); GÜNTHERODT (G.); ZABEL (H.)</AU>
<AF>IPCMS-GEMM (7504, CNRS), ULP-ECPM, 23 Rue du Loess/67037 Strasbourg/France (1 aut., 2 aut., 3 aut., 4 aut., 5 aut.); Department de Physique, Faculté des Sciences, B.P. 1014/Rabat/Maroc (6 aut., 7 aut.); RWTH Aachen/Allemagne (1 aut.); Ruhr-Universität Bochum/Allemagne (2 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Journal of magnetism and magnetic materials; ISSN 0304-8853; Coden JMMMDC; Pays-Bas; Da. 2002; Vol. 240; No. 1-3; Pp. 196-199; Bibl. 6 ref.</SO>
<LA>Anglais</LA>
<EA>We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe<sub>5nm</sub>
/Co<sub>0.5nm</sub>
/Cu<sub>3nm</sub>
/Co<sub>3nm</sub>
/Ru<sub>0.5nm</sub>
/Co<sub>3nm</sub>
/Cu<sub>2nm</sub>
/Cr<sub>2nm</sub>
. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.</EA>
<CC>001B70E70P; 001B80A15C</CC>
<FD>Magnétorésistance géante; Vanne spin; Structure magnétique; Pulvérisation faisceau ionique; Dureté; Sous système; Interface; Réflexion spéculaire; Nanostructure; Semiconducteur; Cobalt; Ruthénium; Bicouche; Couche épaisse; Fer; Co; Ru; Fe; 7570P; 8115C</FD>
<FG>Métal transition; Composé minéral</FG>
<ED>Giant magnetoresistance; Spin valve; Magnetic structure; Ion beam sputtering; Hardness; Subsystem; Interfaces; Specular reflection; Nanostructures; Semiconductor materials; Cobalt; Ruthenium; Bilayers; Thick films; Iron</ED>
<EG>Transition elements; Inorganic compounds</EG>
<SD>Pulverización haz iónico; Subsistema; Reflexión especular</SD>
<LO>INIST-17230.354000101273980550</LO>
<ID>02-0357821</ID>
</server>
</inist>
</record>
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