The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate
Identifieur interne : 000040 ( PascalFrancis/Checkpoint ); précédent : 000039; suivant : 000041The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate
Auteurs : M. R. Khelladi [Algérie] ; L. Mentar [Algérie] ; A. Azizi [Algérie] ; L. Makhloufi [Algérie] ; G. Schmerber [France] ; A. Dinia [France]Source :
- Journal of materials science. Materials in electronics [ 0957-4522 ] ; 2012.
Descripteurs français
- Pascal (Inist)
- Dépôt électrolytique, Voltammétrie, Dissolution, Spectrométrie absorption atomique, Microscopie électronique balayage, Structure dendritique, Conception compacte, Microstructure, Morphologie, Diffractométrie RX, Grosseur grain, Granulométrie, Paramètre cristallin, Aimantation, Cobalt alliage, Cuivre, Couche mince, Silicium, Semiconducteur type n, Réseau cubique face centrée, Fabrication microélectronique, 0779, 6865, 8540H.
- Wicri :
- topic : Cuivre.
English descriptors
- KwdEn :
- Atomic absorption spectrometry, Cobalt alloy, Compact design, Copper, Dendritic structure, Dissolution, Electrodeposition, FCC lattices, Grain size, Grain size analysis, Lattice parameters, Magnetization, Microelectronic fabrication, Microstructure, Morphology, Scanning electron microscopy, Silicon, Thin film, Voltammetry, X ray diffractometry, n type semiconductor.
Abstract
The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.
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R." last="Khelladi">M. R. Khelladi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000 Sétif</wicri:noRegion></affiliation></author><author><name sortKey="Mentar, L" sort="Mentar, L" uniqKey="Mentar L" first="L." last="Mentar">L. Mentar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000 Sétif</wicri:noRegion></affiliation></author><author><name sortKey="Azizi, A" sort="Azizi, A" uniqKey="Azizi A" first="A." last="Azizi">A. 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Dinia</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Institut de Physique et Chimie Des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS, Universite de Strasbourg, 23 Rue Du Loess, BP 43</s1><s2>67034 Strasbourg</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Grand Est</region><region type="old region" nuts="2">Alsace (région administrative)</region><settlement type="city">Strasbourg</settlement></placeName><orgName type="university">Université de Strasbourg</orgName></affiliation></author></analytic><series><title level="j" type="main">Journal of materials science. Materials in electronics</title><title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title><idno type="ISSN">0957-4522</idno><imprint><date when="2012">2012</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Journal of materials science. Materials in electronics</title><title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title><idno type="ISSN">0957-4522</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic absorption spectrometry</term><term>Cobalt alloy</term><term>Compact design</term><term>Copper</term><term>Dendritic structure</term><term>Dissolution</term><term>Electrodeposition</term><term>FCC lattices</term><term>Grain size</term><term>Grain size analysis</term><term>Lattice parameters</term><term>Magnetization</term><term>Microelectronic fabrication</term><term>Microstructure</term><term>Morphology</term><term>Scanning electron microscopy</term><term>Silicon</term><term>Thin film</term><term>Voltammetry</term><term>X ray diffractometry</term><term>n type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt électrolytique</term><term>Voltammétrie</term><term>Dissolution</term><term>Spectrométrie absorption atomique</term><term>Microscopie électronique balayage</term><term>Structure dendritique</term><term>Conception compacte</term><term>Microstructure</term><term>Morphologie</term><term>Diffractométrie RX</term><term>Grosseur grain</term><term>Granulométrie</term><term>Paramètre cristallin</term><term>Aimantation</term><term>Cobalt alliage</term><term>Cuivre</term><term>Couche mince</term><term>Silicium</term><term>Semiconducteur type n</term><term>Réseau cubique face centrée</term><term>Fabrication microélectronique</term><term>0779</term><term>6865</term><term>8540H</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4522</s0></fA01><fA03 i2="1"><s0>J. mater. sci., Mater. electron.</s0></fA03><fA05><s2>23</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate</s1></fA08><fA11 i1="01" i2="1"><s1>KHELLADI (M. R.)</s1></fA11><fA11 i1="02" i2="1"><s1>MENTAR (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>AZIZI (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>MAKHLOUFI (L.)</s1></fA11><fA11 i1="05" i2="1"><s1>SCHMERBER (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>DINIA (A.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif</s1><s2>19000 Sétif</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire de Technologie Des Materiaux et Genie Des Procédés, Universite de Bejaia</s1><s2>Bejaia</s2><s3>DZA</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Institut de Physique et Chimie Des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS, Universite de Strasbourg, 23 Rue Du Loess, BP 43</s1><s2>67034 Strasbourg</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>2245-2250</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22352</s2><s5>354000506236450250</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0039943</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of materials science. Materials in electronics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03C</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15P</s0></fC02><fC02 i1="03" i2="3"><s0>001B70E60E</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dépôt électrolytique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electrodeposition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Depósito electrolítico</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Voltammétrie</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Voltammetry</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Voltametría</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Dissolution</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Dissolution</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Disolución</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" 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l="ENG"><s0>Thin film</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Capa fina</s0><s5>24</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Silicio</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Semiconducteur type n</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>n type semiconductor</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Semiconductor tipo n</s0><s5>26</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Réseau cubique face centrée</s0><s5>27</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>FCC lattices</s0><s5>27</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>46</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>46</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>46</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>0779</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>6865</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>8540H</s0><s4>INC</s4><s5>58</s5></fC03><fN21><s1>021</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist><affiliations><list><country><li>Algérie</li><li>France</li></country><region><li>Alsace (région administrative)</li><li>Grand Est</li></region><settlement><li>Strasbourg</li></settlement><orgName><li>Université de Strasbourg</li></orgName></list><tree><country name="Algérie"><noRegion><name sortKey="Khelladi, M R" sort="Khelladi, M R" uniqKey="Khelladi M" first="M. R." last="Khelladi">M. R. Khelladi</name></noRegion><name sortKey="Azizi, A" sort="Azizi, A" uniqKey="Azizi A" first="A." last="Azizi">A. Azizi</name><name sortKey="Makhloufi, L" sort="Makhloufi, L" uniqKey="Makhloufi L" first="L." last="Makhloufi">L. Makhloufi</name><name sortKey="Mentar, L" sort="Mentar, L" uniqKey="Mentar L" first="L." last="Mentar">L. Mentar</name></country><country name="France"><region name="Grand Est"><name sortKey="Schmerber, G" sort="Schmerber, G" uniqKey="Schmerber G" first="G." last="Schmerber">G. Schmerber</name></region><name sortKey="Dinia, A" sort="Dinia, A" uniqKey="Dinia A" first="A." last="Dinia">A. Dinia</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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|texte= The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate
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