CobaltMaghrebV1, PascalFrancis, Corpus, bibRecord, 000035

The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate

Identifieur interne : 000035 ( PascalFrancis/Corpus ); précédent : 000034; suivant : 000036

The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate

Auteurs : M. R. Khelladi ; L. Mentar ; A. Azizi ; L. Makhloufi ; G. Schmerber ; A. Dinia

Source :

Journal of materials science. Materials in electronics [ 0957-4522 ] ; 2012.

RBID : Pascal:13-0039943

Descripteurs français

Pascal (Inist)
- Dépôt électrolytique, Voltammétrie, Dissolution, Spectrométrie absorption atomique, Microscopie électronique balayage, Structure dendritique, Conception compacte, Microstructure, Morphologie, Diffractométrie RX, Grosseur grain, Granulométrie, Paramètre cristallin, Aimantation, Cobalt alliage, Cuivre, Couche mince, Silicium, Semiconducteur type n, Réseau cubique face centrée, Fabrication microélectronique, 0779, 6865, 8540H.

English descriptors

KwdEn :
- Atomic absorption spectrometry, Cobalt alloy, Compact design, Copper, Dendritic structure, Dissolution, Electrodeposition, FCC lattices, Grain size, Grain size analysis, Lattice parameters, Magnetization, Microelectronic fabrication, Microstructure, Morphology, Scanning electron microscopy, Silicon, Thin film, Voltammetry, X ray diffractometry, n type semiconductor.

Abstract

The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

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C01	`01`		`ENG`	@0 The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.
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Format Inist (serveur)

NO :	PASCAL 13-0039943 INIST
ET :	The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate
AU :	KHELLADI (M. R.); MENTAR (L.); AZIZI (A.); MAKHLOUFI (L.); SCHMERBER (G.); DINIA (A.)
AF :	Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif/19000 Sétif/Algérie (1 aut., 2 aut., 3 aut.); Laboratoire de Technologie Des Materiaux et Genie Des Procédés, Universite de Bejaia/Bejaia/Algérie (4 aut.); Institut de Physique et Chimie Des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS, Universite de Strasbourg, 23 Rue Du Loess, BP 43/67034 Strasbourg/France (5 aut., 6 aut.)
DT :	Publication en série; Niveau analytique
SO :	Journal of materials science. Materials in electronics; ISSN 0957-4522; Etats-Unis; Da. 2012; Vol. 23; No. 12; Pp. 2245-2250; Bibl. 18 ref.
LA :	Anglais
EA :	The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.
CC :	001D03C; 001B80A15P; 001B70E60E; 001D03F17
FD :	Dépôt électrolytique; Voltammétrie; Dissolution; Spectrométrie absorption atomique; Microscopie électronique balayage; Structure dendritique; Conception compacte; Microstructure; Morphologie; Diffractométrie RX; Grosseur grain; Granulométrie; Paramètre cristallin; Aimantation; Cobalt alliage; Cuivre; Couche mince; Silicium; Semiconducteur type n; Réseau cubique face centrée; Fabrication microélectronique; 0779; 6865; 8540H
ED :	Electrodeposition; Voltammetry; Dissolution; Atomic absorption spectrometry; Scanning electron microscopy; Dendritic structure; Compact design; Microstructure; Morphology; X ray diffractometry; Grain size; Grain size analysis; Lattice parameters; Magnetization; Cobalt alloy; Copper; Thin film; Silicon; n type semiconductor; FCC lattices; Microelectronic fabrication
SD :	Depósito electrolítico; Voltametría; Disolución; Espectrometría absorción atómica; Microscopía electrónica barrido; Estructura dendrítica; Concepción compacta; Microestructura; Morfología; Difractometría RX; Grosor grano; Granulometría; Parámetro cristalino; Imanación; Cobalto aleación; Cobre; Capa fina; Silicio; Semiconductor tipo n; Fabricación microeléctrica
LO :	INIST-22352.354000506236450250
ID :	13-0039943

Links to Exploration step

Pascal:13-0039943

Le document en format XML

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<front><div type="abstract" xml:lang="en">The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.</div>
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<fA05><s2>23</s2>
</fA05>
<fA06><s2>12</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KHELLADI (M. R.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MENTAR (L.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>AZIZI (A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MAKHLOUFI (L.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SCHMERBER (G.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>DINIA (A.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif</s1>
<s2>19000 Sétif</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Laboratoire de Technologie Des Materiaux et Genie Des Procédés, Universite de Bejaia</s1>
<s2>Bejaia</s2>
<s3>DZA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institut de Physique et Chimie Des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS, Universite de Strasbourg, 23 Rue Du Loess, BP 43</s1>
<s2>67034 Strasbourg</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>2245-2250</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>22352</s2>
<s5>354000506236450250</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>18 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0039943</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of materials science. Materials in electronics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15P</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70E60E</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03F17</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Dépôt électrolytique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Electrodeposition</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Depósito electrolítico</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Voltammétrie</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Voltammetry</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Voltametría</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dissolution</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Dissolution</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Disolución</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Spectrométrie absorption atomique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Atomic absorption spectrometry</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Espectrometría absorción atómica</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Structure dendritique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Dendritic structure</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Estructura dendrítica</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Conception compacte</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Compact design</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Concepción compacta</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Microstructure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Microstructure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Microestructura</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Morphologie</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Morphology</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Morfología</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Diffractométrie RX</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>X ray diffractometry</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Difractometría RX</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Grosseur grain</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Grain size</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Grosor grano</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Granulométrie</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Grain size analysis</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Granulometría</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Paramètre cristallin</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Lattice parameters</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Parámetro cristalino</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Aimantation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Magnetization</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Imanación</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Cobalt alliage</s0>
<s5>22</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Cobalt alloy</s0>
<s5>22</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Cobalto aleación</s0>
<s5>22</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>23</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>23</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Cobre</s0>
<s2>NC</s2>
<s5>23</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>24</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Thin film</s0>
<s5>24</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>24</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Silicio</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Semiconducteur type n</s0>
<s5>26</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>n type semiconductor</s0>
<s5>26</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Semiconductor tipo n</s0>
<s5>26</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Réseau cubique face centrée</s0>
<s5>27</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>FCC lattices</s0>
<s5>27</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>46</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>46</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>46</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>0779</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>6865</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>8540H</s0>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fN21><s1>021</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
<server><NO>PASCAL 13-0039943 INIST</NO>
<ET>The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate</ET>
<AU>KHELLADI (M. R.); MENTAR (L.); AZIZI (A.); MAKHLOUFI (L.); SCHMERBER (G.); DINIA (A.)</AU>
<AF>Laboratoire de Chimie, Ingenierie Moléculaire et Nanostructures, Universite F. Abbas-Sétif/19000 Sétif/Algérie (1 aut., 2 aut., 3 aut.); Laboratoire de Technologie Des Materiaux et Genie Des Procédés, Universite de Bejaia/Bejaia/Algérie (4 aut.); Institut de Physique et Chimie Des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS, Universite de Strasbourg, 23 Rue Du Loess, BP 43/67034 Strasbourg/France (5 aut., 6 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Journal of materials science. Materials in electronics; ISSN 0957-4522; Etats-Unis; Da. 2012; Vol. 23; No. 12; Pp. 2245-2250; Bibl. 18 ref.</SO>
<LA>Anglais</LA>
<EA>The aim of this work is to study the effect of the deposition potential on the properties of Co-Cu alloy thin films on n-type Si substrate. Voltammetric measurements showed that the potential dissolution of Co and consequently the composition of the films depend greatly on the applied potentials. The compositional measurement, which was made using an atomic absorption spectroscopy (AAS), demonstrated that the Co content of the films considerably increases as the applied potentials tend toward negative values. SEM micrographs revealed a transition of branched dendritic structures to well covered, agglomerated and compact alloy morphology with increased Co concentrations in the deposits. X-ray diffraction analysis showed that the films crystallize in varieties of phases; a mixture of Co fcc and hcp, and Cu fcc structures, greatly related to applied potential. The increase of the applied potential induces a decrease in the grain size and the lattice constant. The magnetization of the alloys was found to be enhanced for high Co concentrations and consequently at high deposition potential.</EA>
<CC>001D03C; 001B80A15P; 001B70E60E; 001D03F17</CC>
<FD>Dépôt électrolytique; Voltammétrie; Dissolution; Spectrométrie absorption atomique; Microscopie électronique balayage; Structure dendritique; Conception compacte; Microstructure; Morphologie; Diffractométrie RX; Grosseur grain; Granulométrie; Paramètre cristallin; Aimantation; Cobalt alliage; Cuivre; Couche mince; Silicium; Semiconducteur type n; Réseau cubique face centrée; Fabrication microélectronique; 0779; 6865; 8540H</FD>
<ED>Electrodeposition; Voltammetry; Dissolution; Atomic absorption spectrometry; Scanning electron microscopy; Dendritic structure; Compact design; Microstructure; Morphology; X ray diffractometry; Grain size; Grain size analysis; Lattice parameters; Magnetization; Cobalt alloy; Copper; Thin film; Silicon; n type semiconductor; FCC lattices; Microelectronic fabrication</ED>
<SD>Depósito electrolítico; Voltametría; Disolución; Espectrometría absorción atómica; Microscopía electrónica barrido; Estructura dendrítica; Concepción compacta; Microestructura; Morfología; Difractometría RX; Grosor grano; Granulometría; Parámetro cristalino; Imanación; Cobalto aleación; Cobre; Capa fina; Silicio; Semiconductor tipo n; Fabricación microeléctrica</SD>
<LO>INIST-22352.354000506236450250</LO>
<ID>13-0039943</ID>
</server>
</inist>
</record>

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The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate

The potential dependence of Co-Cu alloy thin films electrodeposited on n-Si(100) substrate

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