Nanostructured cobalt on porous silicon substrate : Structure and magnetic behaviour
Identifieur interne : 000835 ( Main/Merge ); précédent : 000834; suivant : 000836Nanostructured cobalt on porous silicon substrate : Structure and magnetic behaviour
Auteurs : W. Belkacem [Tunisie] ; N. Mliki [Tunisie] ; R. Delhi [Tunisie] ; W. Saikaly [France] ; B. Yangui [Tunisie]Source :
- Physica status solidi. A, Applications and materials science : (Print) [ 1862-6300 ] ; 2007.
Descripteurs français
- Pascal (Inist)
- Dépôt phase vapeur, Dépôt sous vide, Ultravide, Aimantation, Hystérésis magnétique, Relation structure propriété, Epaisseur, Microscopie électronique balayage, Microscopie électronique transmission, Spectre perte énergie électron, Effet Kerr magnétooptique, Nanoparticule, Cobalt, Nanocristal, Substrat silicium poreux.
- Wicri :
- topic : Cobalt.
English descriptors
- KwdEn :
Abstract
During an anodization process, porous silicon (PS) consisting of pores with a diameter of about 40 nm and a depth from 5 μm to 40 μm has been produced. To achieve oriented channels in this mesoporous range, a p+-type Si wafer was electrochemically etched in an aqueous electrolyte of HF. We report the formation, after the anodization step, of a cobalt nanostructure in a porous silicon matrix. Co nanocrystals on and in a porous silicon layer have been prepared by the UHV evaporation technique and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). This technique was performed to show the chemical element distribution within the channels. It is found that the deposition condition is an important factor for obtaining nanostructures. Initial deposition leads to Co particle penetration in silicon pores whereas subsequent deposition results only in an increase of the thickness at the surface with no further penetration. Additional experiments were carried out by using the magneto-optical Kerr effect to obtain information about the magnetic properties. The first results show that the magnetic response for layers <5 nm presents an important perpendicular component of magnetization whereas for thicker deposited layers (8 nm < t < 20 nm) the magnetic response seems to act as that of a thin film in which the squareness of the hysteresis loop decreases with increasing film thickness.
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Pascal:07-0489693Le document en format XML
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Mliki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire Matériaux, Organisation et Propriétés; Département de Physique, Faculté des Sciences de Tunis, Campus Universitaire Tunis El Manar 2092</s1><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>Laboratoire Matériaux, Organisation et Propriétés; Département de Physique, Faculté des Sciences de Tunis, Campus Universitaire Tunis El Manar 2092</wicri:noRegion></affiliation></author><author><name sortKey="Delhi, R" sort="Delhi, R" uniqKey="Delhi R" first="R." last="Delhi">R. 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Yangui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire Matériaux, Organisation et Propriétés; Département de Physique, Faculté des Sciences de Tunis, Campus Universitaire Tunis El Manar 2092</s1><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>Laboratoire Matériaux, Organisation et Propriétés; Département de Physique, Faculté des Sciences de Tunis, Campus Universitaire Tunis El Manar 2092</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><idno type="ISSN">1862-6300</idno><imprint><date when="2007">2007</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><idno type="ISSN">1862-6300</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cobalt</term><term>Electron energy loss spectra</term><term>Kerr magneto-optical effect</term><term>Magnetic hysteresis</term><term>Magnetization</term><term>Nanocrystal</term><term>Nanoparticles</term><term>Property structure relationship</term><term>Scanning electron microscopy</term><term>Thickness</term><term>Transmission electron microscopy</term><term>Ultrahigh vacuum</term><term>Vacuum deposition</term><term>Vapor deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt phase vapeur</term><term>Dépôt sous vide</term><term>Ultravide</term><term>Aimantation</term><term>Hystérésis magnétique</term><term>Relation structure propriété</term><term>Epaisseur</term><term>Microscopie électronique balayage</term><term>Microscopie électronique transmission</term><term>Spectre perte énergie électron</term><term>Effet Kerr magnétooptique</term><term>Nanoparticule</term><term>Cobalt</term><term>Nanocristal</term><term>Substrat silicium poreux</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Cobalt</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">During an anodization process, porous silicon (PS) consisting of pores with a diameter of about 40 nm and a depth from 5 μm to 40 μm has been produced. To achieve oriented channels in this mesoporous range, a p<sup>+</sup>-type Si wafer was electrochemically etched in an aqueous electrolyte of HF. We report the formation, after the anodization step, of a cobalt nanostructure in a porous silicon matrix. Co nanocrystals on and in a porous silicon layer have been prepared by the UHV evaporation technique and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). This technique was performed to show the chemical element distribution within the channels. It is found that the deposition condition is an important factor for obtaining nanostructures. Initial deposition leads to Co particle penetration in silicon pores whereas subsequent deposition results only in an increase of the thickness at the surface with no further penetration. Additional experiments were carried out by using the magneto-optical Kerr effect to obtain information about the magnetic properties. The first results show that the magnetic response for layers <5 nm presents an important perpendicular component of magnetization whereas for thicker deposited layers (8 nm < t < 20 nm) the magnetic response seems to act as that of a thin film in which the squareness of the hysteresis loop decreases with increasing film thickness.</div></front></TEI><affiliations><list><country><li>France</li><li>Tunisie</li></country><region><li>Provence-Alpes-Côte d'Azur</li></region><settlement><li>Marseille</li></settlement></list><tree><country name="Tunisie"><noRegion><name sortKey="Belkacem, W" sort="Belkacem, W" uniqKey="Belkacem W" first="W." last="Belkacem">W. Belkacem</name></noRegion><name sortKey="Delhi, R" sort="Delhi, R" uniqKey="Delhi R" first="R." last="Delhi">R. Delhi</name><name sortKey="Mliki, N" sort="Mliki, N" uniqKey="Mliki N" first="N." last="Mliki">N. Mliki</name><name sortKey="Yangui, B" sort="Yangui, B" uniqKey="Yangui B" first="B." last="Yangui">B. Yangui</name></country><country name="France"><region name="Provence-Alpes-Côte d'Azur"><name sortKey="Saikaly, W" sort="Saikaly, W" uniqKey="Saikaly W" first="W." last="Saikaly">W. Saikaly</name></region></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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