Serveur d'exploration sur l'Indium - Analysis (Russie)

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P. S. Kop Ev < P. S. Kopev < P. S. Main  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 65.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000397 (2004-06-07) Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000415 (2004-03-19) Mie Resonances, Infrared Emission, and the Band Gap of InN
000513 (2003-10-13) Electrically tunable mid-infrared electroluminescence from graded cascade structures
000545 (2003-06) Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26) A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000590 (2003-01) Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold
000704 (2002-12) MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
000724 (2002-08-25) Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field
000740 (2002-06) Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000751 (2002-04-25) Far Infrared Electroluminescence in Cascade Type-II Heterostructures
000907 (2001-04) Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy
000910 (2001-03-19) Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
000946 (2001) Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
000A26 (2000-12-01) Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
000A84 (2000-05) Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000A85 (2000-05) Power Conversion Efficiency of Quantum Dot Laser Diodes
000B07 (2000-03) Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model
000B12 (2000-03) Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots
000B29 (2000-01) A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate
000C22 (1999-12) Superradiance in semiconductors
000C34 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

List of associated KwdEn.i

Nombre de
documents
Descripteur
61Experimental study
61Indium compounds
47Gallium arsenides
45III-V semiconductors
35Semiconductor quantum dots
26Molecular beam epitaxy
26Photoluminescence
22Aluminium compounds
16Theoretical study
15Semiconductor growth
14Quantum well lasers
11Semiconductor lasers
11Semiconductor quantum wells
10Semiconductor heterojunctions
8TEM
7Electroluminescence
7Interface states
7Semiconductor epitaxial layers
6Antimony compounds
6Current density
6Gallium compounds
6Island structure
6Quantum dots
5Arsenic compounds
5Cadmium compounds
5Energy gap
5Ground states
5Indium arsenides
5Semiconductor laser arrays
4Excited states
4Excitons
4Infrared spectra
4XRD
4self-assembly
3Cyclotron resonance
3II-VI semiconductors
3Interface structure
3Localized states
3Magnesium compounds
3Superradiance
3Ternary compounds
2Aluminium arsenides
2Binary compounds
2Crystal growth from vapors
2Crystal structure
2Electron-hole recombination
2Electronic density of states
2Landau levels
2Lattice parameters
2Nanostructured materials
2Optical properties
2Optical pumping
2Optimization
2Phosphorus compounds
2RHEED
2Selenium compounds
2Semiconductor superlattices
2Time resolved spectra
2Waveguide lasers
1Absorption coefficients
1Anisotropy
1Band structure
1Cathodoluminescence
1Conduction bands
1Crystal microstructure
1Crystal morphology
1Crystal orientation
1Decomposition
1Electrical conductivity
1Electrical pumping
1Electroabsorption
1Electron density
1Electron microscopy
1Electron mobility
1Electron-phonon interactions
1Electroreflectance
1Emission spectra
1Epitaxial layers
1Gold
1Heteroepitaxy
1Heterojunctions
1High-resolution methods
1High-temperature effects
1Hot carriers
1Inclusions
1Infrared laser
1Injection laser
1Interface phenomena
1Intermediate infrared radiation
1LPE
1Laser cavity resonators
1Laser materials
1Laser mirrors
1Laser transitions
1Light emitting devices
1Light emitting diodes
1Light scattering
1Line broadening
1Line intensity
1Line widths

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