P. S. Kop < P. S. Kop Ev < P. S. Kopev

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 69.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000143 (2009)		On the nature of defect states at interfaces of InAs/AlSb quantum wells
000170 (2009)		Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
000280 (2006)		Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
000299 (2006)		Plasmonic effects in InN-based structures with nano-clusters of metallic indium
000357 (2005)		Optical properties of InN with stoichoimetry violation and indium clustering
000362 (2005)		Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000454 (2004)		Plasma-assisted MBE growth and characterization of InN on sapphire
000464 (2004)		Mie resonances, infrared emission, and the band gap of InN
000472 (2004)		InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000492 (2004)		Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000637 (2003)		MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
000683 (2003)		Effect of spin-orbit interaction on cyclotron resonance in inas quantum wells
000847 (2002)		Control by an electric field of electron-hole separation in type-II heterostructures
000C10 (2000)		3.5 W continuous wave operation from quantum dot laser
000C12 (2000)		0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
000D50 (1999)		Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
000D53 (1999)		Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser
000D63 (1999)		Plasma-assisted MBE growth of GaN and InGaN on different substrates
000D73 (1999)		Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers
000D80 (1999)		Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000E06 (1999)		Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status

---

List of associated KwdEn.i

Nombre de documents	Descripteur
50	Experimental study
38	Indium arsenides
35	Photoluminescence
31	Gallium arsenides
22	Molecular beam epitaxy
18	Quantum dots
16	Semiconductor materials
14	Binary compounds
12	Semiconductor lasers
10	Crystal growth from vapors
10	Heterostructures
10	Ternary compounds
8	III-V semiconductors
7	Indium nitrides
7	Threshold current
6	Epitaxial layers
6	Excitons
6	Monolayers
5	Aluminium arsenides
5	Current density
5	Indium Arsenides
5	Optical properties
5	Quantum dot
5	Quantum wells
5	Strains
5	Temperature dependence
5	Theoretical study
4	Binary compound
4	Gallium Antimonides
4	III-V compound
4	Injection laser
4	Mie scattering
4	Quantum well
4	Semiconductor quantum dots
4	Transmission electron microscopy
3	Absorption spectra
3	Aluminium antimonides
3	Cathodoluminescence
3	Characterization
3	Continuous wave lasers
3	Cyclotron resonance
3	Electroluminescence
3	Electronic structure
3	Energy gap
3	Energy-level transitions
3	Heterojunctions
3	Indium antimonides
3	Inorganic compound
3	Inorganic compounds
3	Integrated circuit
3	Laser diodes
3	Magnetic field effects
3	Microelectronic fabrication
3	Quantum efficiency
3	Quantum wires
3	Resonance
3	Self organization
3	Semiconducting indium compounds
3	Substrates
3	Superlattices
3	TEM
3	Thickness
3	XRD
2	Atomic force microscopy
2	Binding energy
2	CW lasers
2	Cadmium selenides
2	Electric field effects
2	Electron-phonon coupling
2	Experiments
2	Gallium Arsenides
2	Gallium antimonides
2	Growth mechanism
2	Heteroepitaxy
2	Infrared spectra
2	Island structure
2	Magnetic field
2	Magneto-optical effects
2	Modulation doping
2	Morphology
2	Multilayers
2	Nanometer scale
2	Nanostructured materials
2	Nanostructures
2	Optical anisotropy
2	Output power
2	Photoconductivity
2	Plasma assisted processing
2	Quantum dot lasers
2	Semiconducting gallium arsenide
2	Temperature effects
2	Theory
2	Waveguides
1	Absorption edge
1	Active layer
1	Aluminium Antimonides arsenides
1	Aluminium compound
1	Ambient temperature
1	Amplitudes
1	Anisotropy

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "P. S. Kop Ev" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "P. S. Kop Ev" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    P. S. Kop Ev
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024