Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. M. Stus »
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N. M. Shmidt < N. M. Stus < N. M. Yates  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]
Ident.Authors (with country if any)Title
000099 (2010) Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
000115 (2010) InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals
000145 (2009) Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
000245 (2007) Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000354 (2005) P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000432 (2004-01) Strongly Compensated InAs Obtained by Proton Irradiation
000528 (2003-08) Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000638 (2003) Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000656 (2003) InAs and InAsSb LEDs with built-in cavities
000727 (2002-08-12) 6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
000730 (2002-08) Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07) Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000782 (2002) Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000858 (2001-12-17) Current crowding in InAsSb light-emitting diodes
000860 (2001-12) Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
000872 (2001-10) High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm)
000902 (2001-05) Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000915 (2001-03) Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
000916 (2001-03) Negative Luminescence in p-InAsSbP/n-InAs Diodes
000A66 (2000-07) InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy
000A94 (2000-04) Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm)

List of associated KwdEn.i

Nombre de
documents
Descripteur
28Experimental study
19Indium compounds
16Gallium arsenides
12Light emitting diodes
11Indium Antimonides arsenides phosphides
10Antimony compounds
10Indium Arsenides
10Photoluminescence
9III-V semiconductors
8Inorganic compound
8Semiconductor lasers
8Semiconductor materials
7Indium arsenides
6Electroluminescence
6Photodiodes
6Theoretical study
6Thin film
5Chemical composition
5Heterojunction
4Arsenic compounds
4Binary compounds
4Indium antimonides
4LPE
4Light emitting diode
4Semiconductor heterojunctions
4Solid solution
4Solid solutions
3Energy gap
3Epitaxy
3Gadolinium
3Gallium Indium Antimonides arsenides Mixed
3Gallium compounds
3Growth from liquid
3Heterojunctions
3Phosphorus compounds
3p n heterojunctions
2Acceptor center
2Ambient temperature
2Binary compound
2Carbon dioxide
2Charge carrier recombination
2Crystal growth
2Dislocation
2Dislocation density
2Epitaxial film
2Experiments
2Flip chip bonding
2Gallium Indium Arsenides Mixed
2Heteroepitaxy
2Heterostructures
2Imagery
2Indium phosphides
2Laser tuning
2Mid infrared radiation
2Narrow band gap semiconductors
2Optoelectronic devices
2P n junction
2Photonic crystals
2Semiconductor growth
2Temperature dependence
1Activation energy
1Analytical method
1Anisotropy
1Antimony Arsenides
1Application
1Arsenic Antimonides
1Atomic force microscopy
1Auger recombination
1Band offset
1Band structure
1Bent graded layer
1Carbon monoxide
1Carrier density
1Carrier mobility
1Cavity
1Circular mesa constructions
1Computer simulation
1Computerized simulation
1Conduction bands
1Crystal face
1Current density
1Current voltage characteristics
1Defect
1Defect absorption spectra
1Defect states
1Density of states
1Device
1Doping
1Double heterojunction
1Elastic deformation
1Elastoplastic strain
1Electric conductivity
1Electric currents
1Electrical conductivity
1Electron density
1Electron-hole recombination
1Emission
1Emission spectrum
1Epitaxial layers
1Far field

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