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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. M. Shmidt »
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N. M. Shimanskaya < N. M. Shmidt < N. M. Stus  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000045 (2012) Failure mechanisms in blue InGaN/GaN LEDs for high power operation
000082 (2011) Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures
000131 (2009) Two channels of non-radiative recombination in InGaN/GaN LEDs
000741 (2002-06) Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells
000809 (2002) Mosaicity and electrical and optical properties of group III nitrides
000947 (2001) Radiation-induced defects in n-type GaN and InN
000D20 (1999-03) Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
000F55 (1998) Experimental studies of the initial diffusion stage in semiconductors
001237 (1996) Peculiarities of the initial stage of Zn diffusion into InP from polymer spin-on films
001265 (1996) Association of time instability of the InP-SiO2 interface characteristics with bulk properties of the insulator
001356 (1995) Rare-earth elements in the technology of InP, InGaAsP and devices based on these semiconductor compounds
001865 (1990) Time-resolved, hot-electron conductivity measurement using an electro-optic sampling technique
001909 (1990) Investigation of the kinetics of the photoconductivity of short InP:Fe photoresistors
001910 (1990) Investigation of the influence of chemical treatment of InP on the surface recombination velocity by the Raman light scattering method
001C87 (1987)
001E23 (1985)

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
7Semiconductor materials
5Indium Phosphides
4Inorganic compound
3Gallium nitride
3III-V semiconductors
3Light emitting diode
2Binary compound
2Binary compounds
2Charge carrier recombination
2Crystal defects
2Diffusion
2Gallium Indium Arsenides Mixed
2Gallium Indium Nitrides Mixed
2Gallium arsenides
2Gallium compounds
2Gallium nitrides
2Impurity
2Indium compounds
2Indium nitrides
2Indium phosphides
2Iron
2Photoconductivity
2Photoluminescence
2Silicon
11/f noise
1Absorption spectra
1Aging test
1Aluminium compounds
1Annealing
1Atoms
1Blue light
1Boron additions
1CV characteristic
1Carrier density
1Carrier mobility
1Cathodoluminescence
1Charge compensation
1Chemical activation
1Chemical bonds
1Chemical interdiffusion
1Coalescence
1Deconvolution
1Defect density
1Diffusion profile
1Domain structure
1Drift velocity
1Electric field
1Electrical conductivity
1Electroluminescence
1Electron irradiation
1Electrons
1Electrooptical properties
1Elemental semiconductors
1Epitaxial layers
1Experiments
1Extended defect
1Failures
1Gallium Arsenides
1High field
1High power
1Hot carrier
1III-V compound
1IV characteristic
1Impurity diffusion
1Indium nitride
1Infrared spectra
1Initial diffusion stage
1Injection current
1Irradiation defect
1Junction
1Kick out mechanism
1Lanthanide
1Leakage current
1Low activation degree
1Low energy electron
1MOCVD
1Measurement method
1Mechanism
1Microdefects
1Microelectronic fabrication
1Microstructure
1Monochromatic radiation
1Mosaic structure
1Multijunction structure
1Multiple quantum well
1Nitrogen compounds
1Non equilibrium conditions
1Non radiative recombination
1Optical properties
1Optical pulse
1P n junction
1Photoresistor
1Physical radiation effects
1Picosecond
1Plasmon
1Point defect
1Polymer spin on films
1Polymers
1Properties of materials

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