M. V. Maksimov < M. V. Maximov < M. V. Mezhennyi

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 61.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000010 (2013)		The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000120 (2010)		Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000312 (2006)		Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000326 (2006)		Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000334 (2005)		Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000348 (2005)		QD lasers : Physics and applications
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000374 (2005)		High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000403 (2004-06)		Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000570 (2003-02-10)		Complete suppression of filamentation and superior beam quality in quantum-dot lasers
000611 (2003)		Recent advances in long wavelength GaAs-based quantum dot lasers
000636 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000654 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000816 (2002)		Long-wavelength quantum-dot lasers
000824 (2002)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency

---

List of associated KwdEn.i

Nombre de documents	Descripteur
46	Gallium arsenides
37	Experimental study
37	Indium arsenides
30	Quantum dots
27	Photoluminescence
27	Semiconductor lasers
24	Ternary compounds
23	Binary compounds
18	Threshold current
17	III-V semiconductors
15	Molecular beam epitaxy
12	Semiconductor materials
12	Semiconductor quantum dots
11	Current density
11	Indium compounds
9	Output power
8	Laser diodes
7	Infrared laser
7	Temperature dependence
7	Vertical cavity laser
6	Aluminium arsenides
6	Optical properties
6	Quantum dot
6	Quantum dot lasers
6	Self organization
6	Surface emitting lasers
6	TEM
5	Binary compound
5	Crystal growth from vapors
5	Electroluminescence
5	Ground states
5	Injection laser
5	Monolayers
5	Quantum well lasers
4	Aluminium compounds
4	Gallium Arsenides
4	Heterostructures
4	High temperature
4	III-V compound
4	Indium Arsenides
4	Island structure
4	Quantum yield
4	Semiconductor growth
3	Continuous wave
3	Continuous wave lasers
3	Excitons
3	Experiments
3	Far field
3	Gain
3	Heteroepitaxy
3	IV characteristic
3	Inorganic compounds
3	Integrated circuit
3	Interface states
3	Microelectronic fabrication
3	Nanostructured materials
3	Optical waveguides
3	Refractive index
3	Semiconducting indium compounds
3	Strains
3	Temperature effects
2	Ambient temperature
2	Atomic force microscopy
2	Bragg reflection
2	Buffer layer
2	CVD
2	CW lasers
2	Energy-level transitions
2	Filamentation
2	Growth mechanism
2	MOCVD
2	Microcavity
2	Modulation doping
2	Multilayers
2	Nanometer scale
2	Optical confinement
2	Optical gain
2	Optical pumping
2	Quantum efficiency
2	Quantum wires
2	Reliability
2	Semiconducting gallium arsenide
2	Semiconducting indium gallium arsenide
2	Semiconductor superlattices
2	Spontaneous emission
2	Substrates
2	Theory
2	Transmission electron microscopy
2	quantum dot lasers
1	Aging
1	Aluminium compound
1	Aluminium phosphides
1	Angular resolution
1	Annealing
1	Arsenic compound
1	Aspect ratio
1	Beam profiles
1	Capacitance
1	Carrier mobility
1	Catastrophic optical mirror damage (COMD)

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "M. V. Maximov" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "M. V. Maximov" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    M. V. Maximov
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024