M. V. Lebedev < M. V. Maksimov < M. V. Maximov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 41.
[0-20] [0 - 20][0 - 41][20-40]

Ident.	Authors (with country if any)	Title
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000539 (2003-07)		Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000553 (2003-05)		Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000716 (2002-09)		The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000B12 (2000-03)		Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots
000B29 (2000-01)		A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate
000C58 (1999-09)		Gain characteristics of quantum-dot injection lasers
000C65 (1999-08)		Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
000C66 (1999-08)		Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures
000C69 (1999-08)		Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
000D09 (1999-04)		Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
000D25 (1999-02)		Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates
000D28 (1999-02)		Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
000D31 (1999-02)		Gain in injection lasers based on self-organized quantum dots
000D42 (1999-01)		Influence of composition and anneal conditions on the optical properties of (In,Ga)As quantum dots in an (Al,Ga)As matrix
000D55 (1999)		Self-organized InAs quantum dots in a silicon matrix
000F07 (1998-01)		Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
000F95 (1997-10)		Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots
000F97 (1997-10)		Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
001011 (1997-08)		Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy

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List of associated KwdEn.i

Nombre de documents	Descripteur
40	Experimental study
33	Gallium arsenides
28	Indium compounds
22	Semiconductor quantum dots
20	Photoluminescence
18	III-V semiconductors
15	Molecular beam epitaxy
10	Theoretical study
9	Current density
9	Indium arsenides
9	Quantum well lasers
5	Semiconductor growth
4	Aluminium compounds
4	Ground states
4	Interface states
4	Island structure
4	Quantum dots
4	Semiconductor lasers
3	Electroluminescence
3	Excited states
3	Excitons
3	Heterojunctions
3	Semiconductor laser arrays
3	Strains
3	TEM
3	Thickness
2	Arsenic compounds
2	Energy gap
2	Interface structure
2	Lattice parameters
2	Light emitting diodes
2	Localized states
2	Semiconductor epitaxial layers
2	Semiconductor quantum wells
2	Temperature
2	Temperature dependence
2	Threshold current
1	Amplitudes
1	Annealing
1	Antimony compounds
1	Arrays
1	Band structure
1	Characterization
1	Cluster evolution
1	Composite materials
1	Critical size
1	Crystal defects
1	Crystal growth from vapors
1	Crystal orientation
1	Crystal structure
1	DLTS
1	Decomposition
1	Deposition
1	Electrical conductivity
1	Electron-hole recombination
1	Electronic density of states
1	Energy-level density
1	Epitaxial layers
1	Epitaxy
1	Gallium compounds
1	Heat treatments
1	Helium-Neon lasers
1	Heterostructures
1	High-temperature effects
1	Inclusions
1	Indium additions
1	Injection
1	Interface phenomena
1	Laser mirrors
1	Layers
1	Matrix materials
1	Nanostructured materials
1	Narrow band gap semiconductors
1	Nondestructive testing
1	Operating mode
1	Optical properties
1	Optical pumping
1	Optoelectronic devices
1	Overlayers
1	Quantization(quantum theory)
1	Quantum dot lasers
1	Quantum interference phenomena
1	RHEED
1	Rapid thermal annealing
1	Schottky barrier diodes
1	Self organization
1	Semiconductor heterojunctions
1	Silicon
1	Size effect
1	Solid clusters
1	Solid solutions
1	Spectra
1	Spectral shift
1	Substrates
1	Superlattices
1	Surface states
1	Temperature control
1	Temperature range 0065-0273 K
1	Thermal stability
1	Transmission electron microscopy

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