Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « M. A. Remennyi »
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M. A. Putyato < M. A. Remennyi < M. A. Remennyy  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]
Ident.Authors (with country if any)Title
000235 (2007) Performance of InAs-based infrared photodiodes
000432 (2004-01) Strongly Compensated InAs Obtained by Proton Irradiation
000528 (2003-08) Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000638 (2003) Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000656 (2003) InAs and InAsSb LEDs with built-in cavities
000727 (2002-08-12) 6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
000730 (2002-08) Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07) Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000782 (2002) Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000858 (2001-12-17) Current crowding in InAsSb light-emitting diodes
000860 (2001-12) Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
000872 (2001-10) High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm)
000902 (2001-05) Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000915 (2001-03) Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
000916 (2001-03) Negative Luminescence in p-InAsSbP/n-InAs Diodes
000A66 (2000-07) InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy
000A94 (2000-04) Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm)
000B28 (2000-01) Light Emitting Diodes for the Spectral Range of λ = 3.3-4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C
000C68 (1999-08) Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm
000C88 (1999-06) Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
000D26 (1999-02) Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-μm spectral range

List of associated KwdEn.i

Nombre de
documents
Descripteur
19Experimental study
18Indium compounds
14Gallium arsenides
10Antimony compounds
10Light emitting diodes
7III-V semiconductors
5Electroluminescence
5Semiconductor lasers
4Arsenic compounds
4Photodiodes
4Semiconductor heterojunctions
3Gadolinium
3Gallium compounds
3Heterojunctions
3LPE
3Phosphorus compounds
3Photoluminescence
3Solid solutions
3Theoretical study
3p n heterojunctions
2Experiments
2Indium arsenides
2Laser tuning
2Narrow band gap semiconductors
2Semiconductor growth
1Ambient temperature
1Application
1Arsenic Antimonides
1Bent graded layer
1Binary compound
1Binary compounds
1Cadmium
1Carbon dioxide
1Carrier density
1Carrier mobility
1Cavity
1Circular mesa constructions
1Computer simulation
1Computerized simulation
1Conduction bands
1Current voltage characteristics
1Defect states
1Dislocation density
1Electric currents
1Electrical conductivity
1Electron density
1Electron-hole recombination
1Emission
1Emission spectrum
1Energy gap
1Epitaxial layers
1Fermi level
1Figure of merit
1Flip chip devices
1Gadolinium compounds
1Gas detector
1Graded band gap
1Indium antimonides
1Infrared imaging
1Infrared sensing
1Infrared sources
1Infrared spectra
1Interface states
1Interface structure
1Lattice constants
1Lattice match
1Lenses
1Light emitting diode
1Line widths
1Liquid phase epitaxy
1Luminescence
1Measuring methods
1Methane
1Optical pumping
1Optical sensors
1Optoelectronic devices
1Phosporous concentration
1Plasticity temperature
1Point contacts
1Power conversion
1Proton effects
1Quantum well lasers
1Quantum yield
1Saturation current
1Semiconducting indium compounds
1Semiconductor device structures
1Semiconductor doping
1Semiconductor epitaxial layers
1Spectroscopy
1Spontaneous emission
1Substrates
1Surface recombination
1Temperature control
1Temperature dependence
1Ternary compound
1Theory
1Wet photolithography
1Zinc

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