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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « M. A. Putyato »
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M. A. Pankov < M. A. Putyato < M. A. Remennyi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000083 (2011) Curvature-tuned InAs-based shells containing two-dimensional electron gas
000088 (2011) 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber
000095 (2010) Semiconductor Nanostructures Modified by the UV Laser Radiation
000649 (2003) InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
000650 (2003) InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
000C40 (1999-10) Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000C62 (1999-08) Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000E36 (1998-10) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
000E58 (1998-07) Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C
000E61 (1998-07) Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000F06 (1998-01) High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
001029 (1997-06-09) Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
001100 (1997) Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Experimental study
11Molecular beam epitaxy
10Gallium arsenides
10III-V semiconductors
6Annealing
5Semiconductor epitaxial layers
5Semiconductor growth
4Indium
4Semiconductor doping
4TEM
4XRD
3Indium arsenides
3Indium compounds
3Infrared spectra
3Quantum wells
3Superlattices
2Binary compounds
2Chemical interdiffusion
2Crystal growth from vapors
2Epitaxial layers
2Gallium Arsenides
2Gallium phosphides
2Indium Arsenides
2Indium phosphides
2Interface structure
2Multilayers
2Nanostructures
2Optical properties
2Point defects
2Precipitation
2Semiconductor superlattices
2Ternary compounds
2Thin films
1Aggregate
1Aluminium antimonides
1Antimony
1Arsenic
1Buried layers
1Charge carriers
1Chemical composition
1Cluster
1Doping profiles
1Electrical conductivity
1Electron density
1Electron mobility
1Excimer lasers
1Formation mechanism
1Gallium antimonides
1Gas lasers
1Heterostructures
1Impurity absorption spectra
1Impurity-vacancy interactions
1Island structure
1Laser irradiation
1Lattice parameters
1Light transmission
1Low temperature
1Mirrors
1Nondestructive testing
1Operating mode
1Optical testing
1Ordering
1Ostwald ripening
1Photoluminescence
1Physical radiation effects
1Process control
1Radius of curvature
1Reflectors
1Saturable absorbers
1Saturable absorption
1Semiconductor materials
1Semiconductor-metal boundaries
1Silicon
1Solid source molecular beam epitaxy
1Stoichiometry
1Sublattices
1Surface topography
1Theoretical study
1Thermal annealing
1Transmission electron microscopy
1Two-dimensional electron gas
1Ultraviolet laser
1X-ray chemical analysis
1antisite defects
1fs range
1ns range

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