A. F. Tsatsul Nikov < A. F. Tsatsulnikov < A. F. Tulinov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 62.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000061 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000074 (2011)		MOVPE of device-oriented wide-band-gap III-N heterostructures
000275 (2007)		Analysis of the local indium composition in ultrathin InGaN layers
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000536 (2003-07)		Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000551 (2003-05)		Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000709 (2002-11)		Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
000713 (2002-10-15)		Quantum dot origin of luminescence in InGaN-GaN structures
000716 (2002-09)		The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000759 (2002-03-25)		Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000778 (2002)		lime-resolved studies of InGaN/GaN quantum dots
000884 (2001-09)		1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots
000895 (2001-07)		1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
000962 (2001)		Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
000979 (2001)		Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping
000980 (2001)		Large spectral splitting of TE and TM components of QDs in a microcavity
000985 (2001)		InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
000988 (2001)		Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers
000A09 (2001)		Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
000A21 (2000-12-15)		Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A26 (2000-12-01)		Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm

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List of associated KwdEn.i

Nombre de documents	Descripteur
53	Experimental study
50	Indium compounds
43	Gallium arsenides
38	Semiconductor quantum dots
35	III-V semiconductors
33	Photoluminescence
18	Molecular beam epitaxy
14	Aluminium compounds
13	Theoretical study
11	Quantum well lasers
10	Semiconductor growth
10	Semiconductor lasers
9	Quantum dots
8	Electroluminescence
8	Ternary compounds
7	Binary compounds
7	Ground states
7	Interface states
7	TEM
6	Current density
6	Excitons
6	Gallium compounds
6	Gallium nitrides
6	Indium arsenides
6	Indium nitrides
6	Island structure
6	Transmission electron microscopy
5	Nanostructured materials
4	Arsenic compounds
4	Localized states
4	MOCVD
4	Optical pumping
4	Semiconductor heterojunctions
4	Semiconductor laser arrays
3	Aluminium nitrides
3	Energy gap
3	Excited states
3	Heterostructures
3	Injection laser
3	Interface structure
3	Optical properties
3	Quantum wells
3	Semiconductor epitaxial layers
3	Semiconductor materials
3	Semiconductor quantum wells
3	Superlattices
3	Surface emitting lasers
2	Chemical composition
2	Electronic density of states
2	Epitaxial layers
2	Excitation spectrum
2	Fabrication property relation
2	Gallium nitride
2	Growth mechanism
2	Inclusions
2	Indium nitride
2	Lattice parameters
2	Light emitting devices
2	Light emitting diodes
2	Microcavity
2	Monolayers
2	Nitrogen compounds
2	Optoelectronic devices
2	Quantum yield
2	RHEED
2	Refractive index
2	Waveguide lasers
2	Wide band gap semiconductors
2	self-assembly
1	Aluminium arsenides
1	Aluminium nitride
1	Angular resolution
1	Antimony compounds
1	Arrays
1	Band structure
1	Buffer layer
1	CVD
1	Charge carriers
1	Confinement
1	Crystal defects
1	Crystal microstructure
1	Crystal morphology
1	Crystal orientation
1	Crystal structure
1	Cyclotron resonance
1	Decomposition
1	Defect structure
1	Diffusion
1	Distributed Bragg reflector lasers
1	Electrical conductivity
1	Electromagnetic wave diffraction
1	Electron-hole recombination
1	Energy-level transitions
1	Epitaxy
1	Exchange interactions (electron)
1	Faraday effect
1	Flip-chip
1	Free carrier
1	Gold
1	Heat treatments

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