Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. F. Tsatsul Nikov »
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A. F. Tsapul Nikov < A. F. Tsatsul Nikov < A. F. Tsatsulnikov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]
Ident.Authors (with country if any)Title
000209 (2008) Energy characteristics of excitons in InGaN/GaN heterostructures
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000593 (2003) Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
000668 (2003) Formation specifity of InAs/GaAs submonolayer superlattice
000969 (2001) Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures
000991 (2001) Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
000A16 (2001) 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
000A17 (2001) 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
000A18 (2001) 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000C12 (2000) 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
000D53 (1999) Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser
000D73 (1999) Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers
000D80 (1999) Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000E06 (1999) Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status
000E15 (1999) 3.9 W CW power from sub-monolayer quantum dot diode laser
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs
000F30 (1998) Optical studies of modulation doped InAs/GaAs quantum dots
000F31 (1998) Optical properties of InAlAs quantum dots in an AlGaAs matrix
000F37 (1998) Lateral association of vertically-coupled quantum dots
000F43 (1998) Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix

List of associated KwdEn.i

Nombre de
documents
Descripteur
21Experimental study
20Photoluminescence
19Indium arsenides
17Gallium arsenides
12Binary compounds
11Quantum dots
9Semiconductor materials
9Ternary compounds
8Molecular beam epitaxy
7Semiconductor lasers
6Binary compound
6Quantum dot
5Self organization
4Aluminium arsenides
4Crystal growth from vapors
4Heteroepitaxy
4Microelectronic fabrication
4Temperature dependence
4Threshold current
4Transmission electron microscopy
3Atomic force microscopy
3Electroluminescence
3Energy-level transitions
3III-V compound
3Integrated circuit
3Island structure
3Optical properties
3TEM
3Ternary compound
2Gallium Arsenides
2III-V semiconductors
2Indium Arsenides
2Infrared laser
2Injection laser
2Laser diodes
2Light emitting diode
2Microcavity
2Monolayers
2Nanometer scale
2Output power
2Performance evaluation
2Quantum wires
2Semiconducting indium compounds
2Semiconductor quantum dots
2Ultrathin films
2Vertical cavity laser
2XRD
1Band offset
1Band splitting
1Band structure
1CVD
1CW lasers
1Capacitance
1Catastrophic optical mirror damage (COMD)
1Cavity resonator
1Characterization
1Chemical etching
1Cladding (coating)
1Continuous wave lasers
1Conversion rate
1Critical size
1Current density
1Density
1Deposition process
1Digital simulation
1Distributed Bragg reflection
1Doping
1Electrical pumping
1Electron state
1Electronic structure
1Energy characteristic
1Energy level
1Energy levels
1Epitaxial layers
1Etching
1Excitons
1Experiments
1Fourier transformation
1Gain
1Gallium Antimonides
1Gallium antimonides
1Germanium
1Graded-index waveguides
1Ground state
1Growth mechanism
1Growth rate
1Heterostructures
1IV characteristic
1Images
1Impurities
1Indium
1Indium Antimonides
1Indium antimonides
1Inorganic compounds
1Intraband transitions
1Kinetics
1Lasers
1Layer thickness
1Localized states
1Luminous intensity current characteristic

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