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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. A. Toropov »
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A. A. Tonkikh < A. A. Toropov < A. A. Tsvetkov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000230 (2007) Recent developments in the III-nitride materials
000299 (2006) Plasmonic effects in InN-based structures with nano-clusters of metallic indium
000358 (2005) Optical properties of InN related to surface plasmons
000362 (2005) Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000397 (2004-06-07) Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000472 (2004) InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000545 (2003-06) Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26) A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000637 (2003) MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
000704 (2002-12) MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
000810 (2002) Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates
000907 (2001-04) Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy
000910 (2001-03-19) Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
000926 (2001-01-15) Excitonic contributions to the quantum-confined Pockels effect
000978 (2001) MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures
000A30 (2000-12) Photoluminescence of Ga1 - xInxAsySb1 - y Solid Solutions Lattice-Matched to InAs
000B84 (2000) Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
12Molecular beam epitaxy
10Photoluminescence
8Indium compounds
6Aluminium compounds
6III-V semiconductors
5Cadmium compounds
5XRD
4Antimony compounds
4Gallium arsenides
4Heterostructures
4II-VI semiconductors
4Indium arsenides
4Indium nitrides
4Semiconductor heterojunctions
4Transmission electron microscopy
3Cadmium selenides
3Crystal growth from vapors
3Epitaxial layers
3Magnesium compounds
3Optical properties
3Quantum wells
3Semiconductor growth
3Semiconductor quantum wells
2Arsenic compounds
2Electroluminescence
2Infrared spectra
2Interface states
2Magnesium selenides
2Selenium compounds
2Semiconductor lasers
2Semiconductor materials
2Zinc tellurides
1Absorption coefficients
1Absorption edge
1Absorption spectra
1Aluminium Antimonides arsenides
1Aluminium antimonides
1Aluminium nitrides
1Aluminium oxides
1Band structure
1Binary compounds
1Chemical composition
1Compressive stress
1Conduction bands
1Crystal structure
1Defect states
1Electric field effects
1Electron density
1Electron microprobe analysis
1Electron mobility
1Electron-hole recombination
1Electronic structure
1Energy gap
1Energy-level splitting
1Excitation spectrum
1Excitons
1External fields
1Gallium antimonides
1Gallium nitrides
1Heterojunctions
1Impurities
1Indium Antimonides arsenides
1Indium antimonides
1Interfaces
1Interfacial layer
1Line intensity
1Magnetic field effects
1Manganese additions
1Manganese compounds
1Metal inclusion
1Morphology
1Multilayers
1Nanostructured materials
1Narrow band gap semiconductors
1Nitrides
1Optical absorption
1Optical pumping
1Passivation
1Plasmons
1Pockels effect
1Quantity ratio
1Quantum dots
1RHEED
1Reviews
1SEM
1SIMS
1Semiconductor epitaxial layers
1Semimagnetic semiconductors
1Shubnikov-de Haas effect
1Solid solutions
1Solid-solid interfaces
1Spintronics
1Stacking fault density
1Stacking sequence
1Strained quantum well
1Strains
1Surface plasmons
1Surface preparation
1TEM

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