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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. A. Tonkikh »
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A. A. Tonkih < A. A. Tonkikh < A. A. Toropov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000075 (2011) Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents
000244 (2007) Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000314 (2006) Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000399 (2004-06) Spectroscopy of Exciton States of InAs Quantum Molecules
000411 (2004-04) The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System
000421 (2004-03) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000526 (2003-08) Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000551 (2003-05) Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000747 (2002-05) Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells
000763 (2002-03) Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures
000955 (2001) Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Gallium arsenides
10Experimental study
10Photoluminescence
8Indium compounds
7Quantum dots
6Semiconductor quantum dots
5Indium arsenides
5Molecular beam epitaxy
4Arsenic compounds
4Quantum wells
3Semiconductor heterojunctions
2Excitons
2III-V semiconductors
2Intraband transitions
2Matrix elements
2Polarized radiation
2Theoretical study
2Transmission electron microscopy
1Absorption coefficients
1Absorption spectra
1Arrays
1Atomic force microscopy
1Binary compounds
1Conduction bands
1Continuum
1Crystal growth from vapors
1Density
1Doping
1Elastic deformation
1Electron diffraction
1Electronic structure
1Energy levels
1Epitaxial layers
1Excited states
1Experimental design
1Fourier transform spectroscopy
1Germanium
1Growth rate
1Heteroepitaxy
1Heterostructures
1III-V compound
1Illumination
1Infrared spectra
1Interband transitions
1Interface structure
1Island structure
1Kinetics
1Laser pulse
1Localized states
1Mid infrared radiation
1Multilayer
1Multiple quantum well
1Nanostructured materials
1Nitrogen additions
1Optical amplification
1Optical pumping
1Photoconductivity
1Photocurrents
1Positron annihilation
1Quantum dot device
1RHEED
1Resonance
1Semiconductor epitaxial layers
1Semiconductor materials
1Semiconductor quantum wells
1Size effect
1Soldered joints
1Surface structure
1Temperature
1Temperature dependence

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