Valence band < Valence bands < Valence electron

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List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]

Ident.	Authors (with country if any)	Title
000060 (2013)		Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000073 (2013)		Band parameters of InGaAs/GaAs quantum dots: electronic properties study
000503 (2008)		Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well
000614 (2007)		Transport measurements under pressure in III-IV layered semiconductors
000626 (2007)		Structural study and electronic band structure investigations of the solid solution NaxCu1-xIn5S8 and its impact on the Cu(In, Ga)Se2/In2S3 interface of solar cells
000787 (2006)		Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures
000819 (2006)		Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000825 (2006)		Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk
000838 (2006)		Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 x 2-c(8 x 2)
000887 (2005)		Structural and electronic properties of BAs and B========exist;Ga1-xAs, BxIn1-xAs alloys
000A02 (2005)		Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe : Transport measurements and electronic structure calculations
000A27 (2004-05-24)		Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
000A31 (2004-05-03)		Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000B12 (2004)		Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN
000C13 (2003-10-15)		Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
000C86 (2003)		Surface states resonance on In-terminated InAs(0 0 1)4 x 2-c(8 x 2) clean surface
000C98 (2003)		Specific features of the electronic structure of III-VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations
000E02 (2003)		Atomic structure and magnetic properties of Mn on InAs(1 0 0)
001078 (2001-09-15)		Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
001094 (2001-06-15)		Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots
001095 (2001-06-15)		Luttinger-like parameter calculations

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