Valence < Valence band < Valence bands

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List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000288 (2010)		Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials
000355 (2010)		Band structure at heterojunction interfaces of GaInP solar cells
000827 (2006)		Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
001A83 (1997-10)		Application des contraintes biaxiales à l'amélioration du transport vertical des trous dans les hétérostructures
002496 (1993-03)		Etude de la dissolution anodique du phosphure d'indium en présence d'un système redox injectant. Comparaison avec le hosphure de gallium et l'arséniure de gallium
002671 (1993)		First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy
002683 (1993)		Electronic structure of crystalline InP oxides
002685 (1993)		Electronic structure and optical properties of (Ga, In)As-(Ga, Al)As quantum wells and superlattices under internal and external strain fields
002788 (1992)		band-offset transitivity in strained (001) heterointerfaces
002820 (1992)		Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells
002865 (1992)		Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells
002911 (1992)		Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
002913 (1992)		Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy
002959 (1991)		Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells
002962 (1991)		Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP : a valence-band contribution
002B68 (1990)		Electronic structure of semiconductor oxides : InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3
002B69 (1990)		Electronic properties of Ga(In)As-based heterostructures
002C49 (1989)		Optical investigation of the band structure of InAs/GaAs short-period superlattices
002D62 (1988)		Optical studies of misfit strain effects in GaxIn1-x P epitaxial layers on (001) GaAs substrates
002E27 (1988)		Band-edge deformation potentials in a tight-binding framework
002E31 (1987)		Spectroscopie XPS d'oxydes et de sulfures d'InP: composés étalons et couches de passivation

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