VPE < Vacancies < Vacancy

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000198 (2011)		MCT IR detectors in France
000267 (2010)		Structural investigation of the Cu2Se-In2Se3-Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1-z(In0.5Ga0.5)1+z/3Se2 compounds
000283 (2010)		Phase evolution during CuInSe2 electrodeposition on polycrystalline Mo
000391 (2009)		Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe
000395 (2009)		Status of very long infrared wave focal plane array development at DEFIR
000399 (2009)		Site preference of Eu2+ dopants in the (Ba,Sr)13-xAl22-2xSi10+2xO66 phosphor and its effect on the luminescence properties: a density functional investigation
000425 (2009)		Local environment in Ba2In2-xWxO5+3x/2 oxide ion conductors
000661 (2007)		Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films
000751 (2006)		Transparent conducting sol-gel ATO coatings for display applications by an improved dip coating technique
000829 (2006)		Ferromagnetism in transition-metal-doped semiconducting oxide thin films
001083 (2001-08)		Atomic slide puzzle: Self-diffusion of an impure atom
001222 (2001)		Influence of the sulfur vacancies on the electronic properties of In16Sn4S32
001316 (2000-09-15)		Raman spectra of CuInTe2, CuIn3Te5, and CuIn5Te8 ternary compounds
001399 (2000)		Pressure-sensitive modeling of the reversible lithiation of vacant thiospinel (In0.5□0.5)[In1.5Sn0.5]S4
001842 (1998-07-27)		Raman spectra of the ordered vacancy compounds CuIn3Se5 and CuGa3Se5
001B65 (1997)		Mise en évidence des défauts profonds dans des structures MIS : Au-PoxNyInz-(n)InP par la méthode FTDLTS
001C64 (1997)		Identification of cadmium vacancy complexes in CdTe(In), CdTe(Cl) and CdTe(I) by positron annihilation with core electrons
001C89 (1997)		Device-relevant point defects in GaAs and InP
002046 (1995-06)		Structure de défauts dans InP irradié caractérisée par annihilation du positon
002077 (1995-01-23)		New encapsulant source for III-V quantum well disordering
002306 (1994-03-14)		Positron trapping at divacancies in thin polycrystalline CdTe films deposited on glass

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