Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « VPE »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
VLSI circuit < VPE < Vacancies  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 76.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000012 (2013) Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000020 (2013) Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
000025 (2013) Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000099 (2012) Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
000109 (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000157 (2011) The high sensitivity of InN under rare earth ion implantation at medium range energy
000172 (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000231 (2011) Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires
000250 (2011) 1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings
000264 (2010) Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates
000297 (2010) Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
000420 (2009) Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
000421 (2009) MOVPE growth of InN buffer layers on sapphire
000452 (2009) Growth of InN films and nanostructures by MOVPE
000474 (2009) Alternative precursors for MOVPE growth of InN and GaN at low temperature
000495 (2008) Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
000522 (2008) Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4
000539 (2008) Microstructured Photonic Crystal for Singlemode Long Wavelength VCSELs
000541 (2008) Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy
000589 (2008) Demonstration of planar thick InP layers by selective MOVPE
000659 (2007) Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "VPE" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "VPE" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    VPE
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024