Surface segregation < Surface states < Surface storage

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000018 (2013)		Surface electronic structure of InSb(001)-c(8 × 2)
000305 (2010)		Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering
000452 (2009)		Growth of InN films and nanostructures by MOVPE
000497 (2008)		Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
000A42 (2004-03-15)		Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects
000A48 (2004-01-15)		Bulklike behavior of the optical anisotropy of cation-rich (001) surfaces of Ga1-xInxAs alloys
000C34 (2003-06-15)		Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001)
000C86 (2003)		Surface states resonance on In-terminated InAs(0 0 1)4 x 2-c(8 x 2) clean surface
000E11 (2003)		60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E54 (2002-06-15)		Instability of metallic In-Sn dimer lines on Si(100) 2×1 surface
001038 (2002)		Cathodic decomposition of InP studied by XPS
001407 (2000)		Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
001535 (1999-09-15)		Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
001691 (1999)		New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
001C00 (1997)		Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE
001C46 (1997)		Ion beam modification of InSe surfaces
002143 (1995)		Na/InAs(110) interface formation at RT
002256 (1994-09)		Etude par photoémission des surfaces (111) et (110) imparfaites de silicium
002266 (1994-07-01)		Photovoltaic activity of electrodeposited p-CuInSe2/electrolyte junction
002273 (1994-07)		Cs-induced highest EF jump above InAs(110) conduction-band minimum
002334 (1994)		Mise en évidence des mécanismes d'injection de porteurs majoritaires à l'interface semiconducteur/électrolyte

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