Surface roughness < Surface segregation < Surface states

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]

Ident.	Authors (with country if any)	Title
000802 (2006)		Magnetic and structural properties of Mn/InSb(001)
000A48 (2004-01-15)		Bulklike behavior of the optical anisotropy of cation-rich (001) surfaces of Ga1-xInxAs alloys
000C34 (2003-06-15)		Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001)
000C46 (2003-04-07)		In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
000D02 (2003)		Role of cadmium on epitaxial growth of PbSe on InP single crystals
000D49 (2003)		Indium surface segregation in AlSb and GaSb
000D55 (2003)		In surface segregation in InGaN/GaN quantum wells
000E27 (2002-10-28)		Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
000F04 (2002)		Substrate disruption and surface segregation for Fe/InAs(001)
001330 (2000-07-10)		Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy
001523 (1999-10-15)		Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy
001543 (1999-08-15)		High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)
001557 (1999-06-28)		An efficient way to improve compositional abruptness at the GaAs on GaInAs interface
001563 (1999-06-14)		GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
001591 (1999-02-15)		Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells
001717 (1999)		Indium surface segregation in strained GaInAs quantum wells grown on (1 1 1) GaAs substrates by MBE
001770 (1999)		Atomic structure of the (2 x 4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indium segregation
001803 (1998-11-16)		Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
001837 (1998-08-15)		X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
001855 (1998-07)		Surface roughness, strain, and alloy segregation in lattice-matched heteroepitaxy
001A17 (1998)		Effect of indium surface segregation on excitonic properties in (111)B-grown (In, Ga)As/GaAs multiple quantum wells

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