Semiconductor device reliability < Semiconductor device structures < Semiconductor device testing

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List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000D36 (2003)		Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000D90 (2003)		Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
000F64 (2002)		Mux-driver-EAM in single module - a solution for ultra-high bit rate applications
001057 (2002)		0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001431 (2000)		Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001443 (2000)		High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range
001453 (2000)		Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage
001634 (1999)		Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001664 (1999)		Smart-Cut process using metallic bonding: Application to transfer of Si, GaAs, InP thin films
001670 (1999)		Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001775 (1999)		Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm
001787 (1999)		0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001940 (1998)		Room-temperature continuous-wave operation VCSEL at 1.48 μm with Sb-based Bragg reflector
001967 (1998)		Numerical analysis of device performance of metamorphic InyAl1-yAs/InxGa1-xAs (0.3≤x≤0.6) HEMT's on GaAs substrate
001994 (1998)		Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001A25 (1998)		Capacitance engineering for InP-based heterostructure barrier varactor
001C19 (1997)		Procedure to minimize interface-state errors in MIS doping profile determinations
001C22 (1997)		Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
001C35 (1997)		Monolithic vertical cavity device lasing at 1.55μm in InGaAlAs system
001C36 (1997)		Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
001C37 (1997)		Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature

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